Single FETs, MOSFETs

Results: 2
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 100A (Tc)27A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs
2.8mOhm @ 50A, 10V3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 93µA2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3180 pF @ 10 V13000 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 139W (Tc)3.6W (Ta), 59W (Tc)
Supplier Device Package
PG-TDSON-8-1PQFN (5x6)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-1
BSC028N06LS3GATMA1
MOSFET N-CH 60V 23A/100A TDSON
Infineon Technologies
10,920
In Stock
1 : ¥23.89000
Cut Tape (CT)
5,000 : ¥11.13875
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Ta), 100A (Tc)
4.5V, 10V
2.8mOhm @ 50A, 10V
2.2V @ 93µA
175 nC @ 10 V
±20V
13000 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-Power TDFN
IRFH8318TRPBF
MOSFET N-CH 30V 27A/120A PQFN
Infineon Technologies
19,425
In Stock
1 : ¥7.31000
Cut Tape (CT)
4,000 : ¥2.41473
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
27A (Ta), 120A (Tc)
4.5V, 10V
3.1mOhm @ 20A, 10V
2.35V @ 50µA
41 nC @ 10 V
±20V
3180 pF @ 10 V
-
3.6W (Ta), 59W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.