Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiSTMicroelectronics
Series
-SuperMESH™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V900 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 10mA, 4V6.5Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
1.15 nC @ 5 V27 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
21 pF @ 5 V485 pF @ 25 V
Power Dissipation (Max)
690mW (Ta)70W (Tc)
Supplier Device Package
DPAKSOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR4003NT3G
MOSFET N-CH 30V 500MA SOT23-3
onsemi
177,784
In Stock
1 : ¥2.79000
Cut Tape (CT)
10,000 : ¥0.42054
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
500mA (Ta)
2.5V, 4V
1.5Ohm @ 10mA, 4V
1.4V @ 250µA
1.15 nC @ 5 V
±20V
21 pF @ 5 V
-
690mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
MFG_DPAK(TO252-3)
STD2NK90ZT4
MOSFET N-CH 900V 2.1A DPAK
STMicroelectronics
1,529
In Stock
1 : ¥14.78000
Cut Tape (CT)
2,500 : ¥6.66399
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
900 V
2.1A (Tc)
10V
6.5Ohm @ 1.05A, 10V
4.5V @ 50µA
27 nC @ 10 V
±30V
485 pF @ 25 V
-
70W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.