Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesMicro Commercial CoToshiba Semiconductor and Storage
Series
-HEXFET®OptiMOS™U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)8A17A (Ta), 49A (Tc), 59A (Tc)26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
5.9mOhm @ 50A, 10V11.4mOhm @ 13A, 10V63mOhm @ 3.4A, 4.5V110mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
1.1V @ 10µA2.3V @ 250µA2.5V @ 200µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V9.4 nC @ 10 V17 nC @ 10 V20 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 24 V830 pF @ 20 V1050 pF @ 80 V1625 pF @ 30 V
Power Dissipation (Max)
610mW (Ta), 61W (Tc)1.3W (Ta)2.2W3W (Ta), 38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C
Supplier Device Package
8-TSON Advance (3.1x3.1)Micro3™/SOT-23PG-TDSON-8-6SOT-223
Package / Case
8-PowerTDFN8-PowerVDFNTO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6346TRPBF
MOSFET N-CH 30V 3.4A SOT23
Infineon Technologies
82,158
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83410
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 4.5V
63mOhm @ 3.4A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
270 pF @ 24 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
9,997
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.85723
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
11.4mOhm @ 13A, 10V
2.5V @ 200µA
17 nC @ 10 V
±20V
1625 pF @ 30 V
-
610mW (Ta), 61W (Tc)
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
40,417
In Stock
1 : ¥9.36000
Cut Tape (CT)
5,000 : ¥3.69716
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
17A (Ta), 49A (Tc), 59A (Tc)
4.5V, 10V
5.9mOhm @ 50A, 10V
2.3V @ 250µA
9.4 nC @ 10 V
±20V
830 pF @ 20 V
-
3W (Ta), 38W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
MCT03N06-TP
MCT08P10Y-TP
P-CHANNEL MOSFET,SOT-223
Micro Commercial Co
5,271
In Stock
1 : ¥13.38000
Cut Tape (CT)
2,500 : ¥6.04645
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
8A
4.5V, 10V
110mOhm @ 8A, 10V
2.5V @ 250µA
20 nC @ 10 V
±20V
1050 pF @ 80 V
-
2.2W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
Showing
of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.