Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTTFS5C673NLTAG MOSFET N-CH 60V 13A/50A 8WDFN onsemi	0 In Stock Check Lead Time	1 : ¥6.65000 Cut Tape (CT) 1,500 : ¥2.58244 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	13A (Ta), 50A (Tc)	4.5V, 10V	9.3mOhm @ 25A, 10V	2V @ 250µA	9.5 nC @ 10 V	±20V	880 pF @ 25 V	-	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
MIC94053YC6-TR MOSFET P-CH 6V 2A SC70-6 Microchip Technology	4,988 In Stock	1 : ¥6.40000 Cut Tape (CT) 3,000 : ¥5.13084 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	6 V	2A (Ta)	1.8V, 4.5V	84mOhm @ 100mA, 4.5V	1.2V @ 250µA	-	6V	-	-	270mW (Ta)	-40°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
NTTFS5C453NLTAG MOSFET N-CH 40V 23A/107A 8WDFN onsemi	14,224 In Stock	1 : ¥8.13000 Cut Tape (CT) 1,500 : ¥3.45920 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	23A (Ta), 107A (Tc)	4.5V, 10V	3mOhm @ 40A, 10V	2V @ 250µA	35 nC @ 10 V	±20V	2100 pF @ 25 V	-	3.3W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.