Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)10A (Ta)15A (Ta), 50A (Tc)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 50A, 10V11mOhm @ 50A, 10V13mOhm @ 10A, 4.5V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA1.6V @ 250µA2.2V @ 35µA4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V33 nC @ 10 V67 nC @ 10 V74 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V2700 pF @ 30 V4951 pF @ 10 V5100 pF @ 30 V
Power Dissipation (Max)
350mW (Ta)2.5W (Ta)2.5W (Ta), 50W (Tc)2.5W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-SOICPG-TDSON-8-5SOT-23-3
Package / Case
8-PowerTDFN8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138
MOSFET N-CH 50V 220MA SOT23-3
onsemi
169,157
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.48925
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
2.4 nC @ 10 V
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC110N06NS3GATMA1
MOSFET N-CH 60V 50A TDSON-8
Infineon Technologies
8,207
In Stock
1 : ¥8.29000
Cut Tape (CT)
5,000 : ¥3.27246
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
10V
11mOhm @ 50A, 10V
4V @ 23µA
33 nC @ 10 V
±20V
2700 pF @ 30 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
8-Power TDFN
BSC067N06LS3GATMA1
MOSFET N-CH 60V 15A/50A TDSON
Infineon Technologies
8,656
In Stock
1 : ¥12.81000
Cut Tape (CT)
5,000 : ¥5.04451
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
15A (Ta), 50A (Tc)
4.5V, 10V
6.7mOhm @ 50A, 10V
2.2V @ 35µA
67 nC @ 10 V
±20V
5100 pF @ 30 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
8-SOIC
FDS6575
MOSFET P-CH 20V 10A 8SOIC
onsemi
16,541
In Stock
7,500
Factory
1 : ¥11.25000
Cut Tape (CT)
2,500 : ¥4.65276
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
10A (Ta)
2.5V, 4.5V
13mOhm @ 10A, 4.5V
1.5V @ 250µA
74 nC @ 4.5 V
±8V
4951 pF @ 10 V
-
2.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.