Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and Storage
Series
-π-MOSV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V3.3V, 10V
Rds On (Max) @ Id, Vgs
74mOhm @ 2.8A, 4.5V300mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2V @ 1mA
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 10 V744 pF @ 20 V
Power Dissipation (Max)
480mW (Ta)1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23FTO-236AB
Package / Case
SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV65XP,215
MOSFET P-CH 20V 2.8A TO236AB
Nexperia USA Inc.
265,257
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.77622
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.8A (Ta)
1.8V, 4.5V
74mOhm @ 2.8A, 4.5V
900mV @ 250µA
7.7 nC @ 4.5 V
±12V
744 pF @ 20 V
-
480mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
86,404
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18666
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
3.3V, 10V
300mOhm @ 1A, 10V
2V @ 1mA
-
±20V
150 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.