Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Tj)6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 5A, 10V-
Vgs(th) (Max) @ Id
3V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V53.1 nC @ 10 V
Vgs (Max)
±8V±20V
Power Dissipation (Max)
400mW1.2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
4-WLCSP (0.78x0.78)8-SO
Package / Case
4-XFBGA, WLCSP8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8 SO
DMP6023LSS-13
MOSFET P-CH 60V 6.6A 8SO
Diodes Incorporated
13,631
In Stock
305,000
Factory
1 : ¥6.90000
Cut Tape (CT)
2,500 : ¥2.60528
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
6.6A (Ta)
4.5V, 10V
25mOhm @ 5A, 10V
3V @ 250µA
53.1 nC @ 10 V
±20V
2569 pF @ 30 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
WLCSP4
PMCM4402UPEZ
MOSFET P-CH 20V 4WLCSP
Nexperia USA Inc.
7,310
In Stock
1 : ¥3.28000
Cut Tape (CT)
9,000 : ¥0.72869
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Tj)
2.5V, 4.5V
-
-
6.2 nC @ 4.5 V
±8V
-
-
400mW
150°C (TJ)
Surface Mount
4-WLCSP (0.78x0.78)
4-XFBGA, WLCSP
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.