Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay General Semiconductor - Diodes Division
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
287A (Tc)435A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 50A, 10V2.15mOhm @ 200A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3.8V @ 750µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 4.5 V375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8900 pF @ 25 V17300 pF @ 25 V
Power Dissipation (Max)
200W (Tc)652W (Tc)
Mounting Type
Chassis MountSurface Mount
Supplier Device Package
5-DFN (5x6) (8-SOFL)SOT-227
Package / Case
8-PowerTDFN, 5 LeadsSOT-227-4, miniBLOC
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
5-DFN, 8-SO Flat Lead
NVMFS5C604NLAFT1G
MOSFET N-CH 60V 287A 5DFN
onsemi
780
In Stock
1 : ¥48.27000
Cut Tape (CT)
1,500 : ¥24.96315
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
287A (Tc)
4.5V, 10V
1.2mOhm @ 50A, 10V
2V @ 250µA
52 nC @ 4.5 V
±20V
8900 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
109
In Stock
1 : ¥191.20000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
435A (Tc)
10V
2.15mOhm @ 200A, 10V
3.8V @ 750µA
375 nC @ 10 V
±20V
17300 pF @ 25 V
-
652W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.