Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS123W-7-F MOSFET N-CH 100V 170MA SOT323 Diodes Incorporated	466,039 In Stock 1,350,000 Factory	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.57277 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	2V @ 1mA	-	±20V	60 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SI7454FDP-T1-RE3 N-CHANNEL 100-V (D-S) MOSFET POW Vishay Siliconix	8,209 In Stock	1 : ¥6.98000 Cut Tape (CT) 3,000 : ¥2.87472 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.2A (Ta), 23.5A (Tc)	4.5V, 10V	29.5mOhm @ 10A, 10V	2.4V @ 250µA	26.5 nC @ 10 V	±20V	1110 pF @ 50 V	-	3.6W (Ta), 39W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJ459EP-T2_BE3 P-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix	1,227 In Stock	1 : ¥10.10000 Cut Tape (CT) 3,000 : ¥4.18307 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	52A (Tc)	4.5V, 10V	18mOhm @ 3.5A, 10V	2.5V @ 250µA	108 nC @ 10 V	±20V	4586 pF @ 30 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.