Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V600 V
Current - Continuous Drain (Id) @ 25°C
50mA (Ta)3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V5V, 10V
Rds On (Max) @ Id, Vgs
72mOhm @ 3.6A, 4.5V160Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.08 nC @ 10 V3.8 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
21.8 pF @ 25 V292 pF @ 10 V
Power Dissipation (Max)
610mW (Ta)760mW (Ta)
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN2046U-7
MOSFET N-CH 20V 3.4A SOT23
Diodes Incorporated
262,880
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.39137
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.4A (Ta)
2.5V, 4.5V
72mOhm @ 3.6A, 4.5V
1.4V @ 250µA
3.8 nC @ 4.5 V
±12V
292 pF @ 10 V
-
760mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS127S-7
MOSFET N-CH 600V 50MA SOT23
Diodes Incorporated
184,889
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.54776
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50mA (Ta)
5V, 10V
160Ohm @ 16mA, 10V
4.5V @ 250µA
1.08 nC @ 10 V
±20V
21.8 pF @ 25 V
-
610mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.