Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)7A (Ta), 18.2A (Tc)21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 20A, 4.5V28mOhm @ 5A, 10V52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
1.1V @ 50µA1.4V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.7 nC @ 10 V53.1 nC @ 10 V62 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
464 pF @ 15 V2569 pF @ 30 V3170 pF @ 25 V
Power Dissipation (Max)
1.4W (Ta)2W (Ta)2.7W (Ta), 37W (Tc)
Supplier Device Package
PQFN (3x3)SOT-223-3SOT-23-3
Package / Case
8-VQFN Exposed PadTO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG3402L-7
MOSFET N-CH 30V 4A SOT23
Diodes Incorporated
348,754
In Stock
5,157,000
Factory
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.64179
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
2.5V, 10V
52mOhm @ 4A, 10V
1.4V @ 250µA
11.7 nC @ 10 V
±12V
464 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-223-3
DMP6023LE-13
MOSFET P-CH 60V 7A/18.2A SOT223
Diodes Incorporated
45,704
In Stock
390,000
Factory
1 : ¥6.57000
Cut Tape (CT)
2,500 : ¥2.48138
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7A (Ta), 18.2A (Tc)
4.5V, 10V
28mOhm @ 5A, 10V
3V @ 250µA
53.1 nC @ 10 V
±20V
2569 pF @ 30 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
IRFHM830DTR2PBF
IRLHM630TRPBF
MOSFET N-CH 30V 21A/40A PQFN
Infineon Technologies
16,063
In Stock
1 : ¥8.29000
Cut Tape (CT)
4,000 : ¥3.42951
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 40A (Tc)
2.5V, 10V
3.5mOhm @ 20A, 4.5V
1.1V @ 50µA
62 nC @ 4.5 V
±12V
3170 pF @ 25 V
-
2.7W (Ta), 37W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (3x3)
8-VQFN Exposed Pad
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.