Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiTexas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V5V, 10V
Rds On (Max) @ Id, Vgs
2mOhm @ 30A, 8V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA2.1V @ 250µA
Vgs (Max)
+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V4280 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)3.2W (Ta)
Supplier Device Package
8-VSON-CLIP (5x6)SOT-323
Package / Case
8-PowerTDFNSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC70, SOT−323, 419−04
2N7002KW
MOSFET N-CH 60V 310MA SC70
onsemi
57,930
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.66583
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
1.6Ohm @ 500mA, 10V
2.1V @ 250µA
-
±20V
50 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
8-Power TDFN
CSD17311Q5
MOSFET N-CH 30V 32A/100A 8VSON
Texas Instruments
3,909
In Stock
1 : ¥15.76000
Cut Tape (CT)
2,500 : ¥7.09836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
3V, 8V
2mOhm @ 30A, 8V
1.6V @ 250µA
31 nC @ 4.5 V
+10V, -8V
4280 pF @ 15 V
-
3.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.