Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologies
Series
-CoolMOS™ P7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V700 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
115mOhm @ 12A, 10V360mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
16.4 nC @ 10 V20 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
517 pF @ 400 V1185 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)59.4W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
PG-TO252-3TO-252 (DPAK)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
161,863
In Stock
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.73664
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
12A (Tc)
4.5V, 10V
115mOhm @ 12A, 10V
3V @ 250µA
20 nC @ 10 V
±20V
1185 pF @ 30 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
Infineon Technologies
106,105
In Stock
1 : ¥7.88000
Cut Tape (CT)
2,500 : ¥3.27425
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
12.5A (Tc)
10V
360mOhm @ 3A, 10V
3.5V @ 150µA
16.4 nC @ 10 V
±16V
517 pF @ 400 V
-
59.4W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.