Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDC637BNZ MOSFET N-CH 20V 6.2A SUPERSOT6 onsemi	8,439 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥1.18631 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6.2A (Ta)	2.5V, 4.5V	24mOhm @ 6.2A, 4.5V	1.5V @ 250µA	12 nC @ 4.5 V	±12V	895 pF @ 10 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6
SI2366DS-T1-GE3 MOSFET N-CH 30V 5.8A SOT23-3 Vishay Siliconix	17,219 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥1.22297 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.8A (Tc)	10V	36mOhm @ 4.5A, 10V	2.5V @ 250µA	10 nC @ 10 V	±20V	335 pF @ 15 V	-	1.25W (Ta), 2.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI6423DQ-T1-GE3 MOSFET P-CH 12V 8.2A 8TSSOP Vishay Siliconix	7,456 In Stock	1 : ¥13.96000 Cut Tape (CT) 3,000 : ¥6.28573 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	8.2A (Ta)	1.8V, 4.5V	8.5mOhm @ 9.5A, 4.5V	800mV @ 400µA	110 nC @ 5 V	±8V	-	-	1.05W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.