Single FETs, MOSFETs

Results: 3
Manufacturer
EPCInfineon Technologiesonsemi
Series
-CoolSiC™eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V50 V1700 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)7.4A (Tc)29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V12V, 15V
Rds On (Max) @ Id, Vgs
3.6mOhm @ 15A, 5V650mOhm @ 1.5A, 15V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 7mA5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 12 V8.5 nC @ 5 V
Vgs (Max)
+6V, -4V+20V, -10V±20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 5 V422 pF @ 1000 V1111 pF @ 20 V
Power Dissipation (Max)
225mW (Ta)88W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DiePG-TO263-7-13SOT-23-3 (TO-236)
Package / Case
DieTO-236-3, SC-59, SOT-23-3TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3
onsemi
84,284
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.50758
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 250µA
-
±20V
30 pF @ 5 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
EPC2055
EPC2055
GANFET N-CH 40V 29A DIE
EPC
34,215
In Stock
1 : ¥20.03000
Cut Tape (CT)
2,500 : ¥9.04263
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
40 V
29A (Ta)
5V
3.6mOhm @ 15A, 5V
2.5V @ 7mA
8.5 nC @ 5 V
+6V, -4V
1111 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,863
In Stock
1 : ¥45.81000
Cut Tape (CT)
1,000 : ¥23.68635
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
+20V, -10V
422 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.