Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
-CoolMOS™ G7HEXFET®, StrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
25 V40 V60 V600 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)150A (Tc)195A (Tc)325A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1mOhm @ 25A, 10V1.81mOhm @ 25A, 10V2.4mOhm @ 100A, 10V80mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
2.2V @ 1mA3.6V @ 1mA3.7V @ 250µA4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V58 nC @ 10 V137 nC @ 10 V279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 400 V3167 pF @ 12 V10034 pF @ 25 V10322 pF @ 25 V
FET Feature
-Schottky Diode (Body)
Power Dissipation (Max)
106W (Tc)167W (Tc)294W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
LFPAK33LFPAK88 (SOT1235)PG-HSOF-8-2TO-220AB
Package / Case
8-PowerSFNSOT-1210, 8-LFPAK33 (5-Lead)SOT-1235TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PSMN1R9-80SSEJ
PSMN1R0-40SSHJ
MOSFET N-CH 40V 325A LFPAK88
Nexperia USA Inc.
900
In Stock
1 : ¥28.73000
Cut Tape (CT)
2,000 : ¥10.61697
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
325A (Tc)
10V
1mOhm @ 25A, 10V
3.6V @ 1mA
137 nC @ 10 V
±20V
10322 pF @ 25 V
Schottky Diode (Body)
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
TO-220AB PKG
IRFB7534PBF
MOSFET N-CH 60V 195A TO220AB
Infineon Technologies
9,331
In Stock
1 : ¥14.12000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
6V, 10V
2.4mOhm @ 100A, 10V
3.7V @ 250µA
279 nC @ 10 V
±20V
10034 pF @ 25 V
-
294W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
LFPAK33
PSMN1R5-25MLHX
MOSFET N-CH 25V 150A LFPAK33
Nexperia USA Inc.
45,287
In Stock
1 : ¥9.52000
Cut Tape (CT)
1,500 : ¥5.07709
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
150A (Tc)
4.5V, 10V
1.81mOhm @ 25A, 10V
2.2V @ 1mA
58 nC @ 10 V
±20V
3167 pF @ 12 V
-
106W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
PG-HSOF-8-2
IPT60R080G7XTMA1
MOSFET N-CH 600V 29A 8HSOF
Infineon Technologies
5,653
In Stock
1 : ¥39.33000
Cut Tape (CT)
2,000 : ¥29.08349
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
80mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1640 pF @ 400 V
-
167W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.