Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)4A (Ta)
Rds On (Max) @ Id, Vgs
100mOhm @ 4A, 10V250mOhm @ 910mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
85 pF @ 25 V345 pF @ 25 V
Power Dissipation (Max)
540mW (Ta)3W (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
Micro3™/SOT-23SOT-223-4
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML2803TRPBF
MOSFET N-CH 30V 1.2A SOT23
Infineon Technologies
160,156
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80293
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.2A (Ta)
4.5V, 10V
250mOhm @ 910mA, 10V
1V @ 250µA
5 nC @ 10 V
±20V
85 pF @ 25 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT223-3L
NDT3055L
MOSFET N-CH 60V 4A SOT-223-4
onsemi
0
In Stock
Check Lead Time
1 : ¥8.29000
Cut Tape (CT)
4,000 : ¥3.43383
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4A (Ta)
4.5V, 10V
100mOhm @ 4A, 10V
2V @ 250µA
20 nC @ 10 V
±20V
345 pF @ 25 V
-
3W (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.