Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V240 V
Current - Continuous Drain (Id) @ 25°C
110mA (Ta)52A (Tc)
Rds On (Max) @ Id, Vgs
18mOhm @ 3.5A, 10V14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 56µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.1 nC @ 10 V108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
77 pF @ 25 V4586 pF @ 30 V
Power Dissipation (Max)
360mW (Ta)83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-SOT23PowerPAK® SO-8
Package / Case
PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS131H6327XTSA1
MOSFET N-CH 240V 110MA SOT23-3
Infineon Technologies
14,192
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68272
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
240 V
110mA (Ta)
4.5V, 10V
14Ohm @ 100mA, 10V
1.8V @ 56µA
3.1 nC @ 10 V
±20V
77 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
PowerPAK-SO-8-Single
SQJ459EP-T2_BE3
P-CHANNEL 60-V (D-S) 175C MOSFET
Vishay Siliconix
2,757
In Stock
1 : ¥10.10000
Cut Tape (CT)
3,000 : ¥4.18307
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
52A (Tc)
4.5V, 10V
18mOhm @ 3.5A, 10V
2.5V @ 250µA
108 nC @ 10 V
±20V
4586 pF @ 30 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.