Single FETs, MOSFETs

Results: 3
Manufacturer
EPCNexperia USA Inc.Toshiba Semiconductor and Storage
Series
eGaN®TrenchMOS™U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V60 V200 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)5A (Ta)6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V5V10V
Rds On (Max) @ Id, Vgs
42mOhm @ 5A, 10V100mOhm @ 3A, 5V1.6Ohm @ 320mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 1mA1.6V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V1.3 nC @ 5 V8.2 nC @ 4.5 V
Vgs (Max)
+6V, -4V+12V, -6V±20V
Input Capacitance (Ciss) (Max) @ Vds
56 pF @ 10 V140 pF @ 100 V560 pF @ 15 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)1W (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C
Supplier Device Package
DieSOT-23FSOT-323
Package / Case
DieSC-70, SOT-323SOT-23-3 Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
180,829
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.60714
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
42mOhm @ 5A, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
+12V, -6V
560 pF @ 15 V
-
1W (Ta)
150°C
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
eGaN Series
EPC2012C
GANFET N-CH 200V 5A DIE OUTLINE
EPC
7,356
In Stock
1 : ¥23.97000
Cut Tape (CT)
2,500 : ¥10.80705
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
5A (Ta)
5V
100mOhm @ 3A, 5V
2.5V @ 1mA
1.3 nC @ 5 V
+6V, -4V
140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
SOT-323
BSS138BKW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
253,882
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.50217
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 320mA, 10V
1.6V @ 250µA
0.7 nC @ 4.5 V
±20V
56 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.