Single FETs, MOSFETs

Results: 2
Manufacturer
Panjit International Inc.Toshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Ta)6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
42mOhm @ 5A, 10V100mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.4 nC @ 4.5 V8.2 nC @ 4.5 V
Vgs (Max)
+12V, -6V±12V
Input Capacitance (Ciss) (Max) @ Vds
416 pF @ 10 V560 pF @ 15 V
Power Dissipation (Max)
1W (Ta)1.25W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
SOT-23SOT-23F
Package / Case
SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
180,529
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.60714
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
42mOhm @ 5A, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
+12V, -6V
560 pF @ 15 V
-
1W (Ta)
150°C
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
61,610
In Stock
1 : ¥3.12000
Cut Tape (CT)
-
Cut Tape (CT)
Digi-Reel®
-
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.1A (Ta)
1.8V, 4.5V
100mOhm @ 3.1A, 4.5V
1.2V @ 250µA
5.4 nC @ 4.5 V
±12V
416 pF @ 10 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.