Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)470mA (Ta)2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
92mOhm @ 2.7A, 10V900mOhm @ 280mA, 4.5V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
680mV @ 1mA (Typ)1.5V @ 250µA2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
0.95 nC @ 10 V2.2 nC @ 4.5 V2.5 nC @ 4.5 V
Vgs (Max)
±8V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
23.2 pF @ 25 V110 pF @ 24 V290 pF @ 25 V
Power Dissipation (Max)
380mW (Ta)417mW (Ta)1.25W (Ta)
Supplier Device Package
Micro3™/SOT-23SOT-23-3TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML0060TRPBF
MOSFET N-CH 60V 2.7A SOT23
Infineon Technologies
43,175
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.13548
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.7A (Ta)
4.5V, 10V
92mOhm @ 2.7A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS138K-13
MOSFET N-CH 50V 310MA SOT23
Diodes Incorporated
395,220
In Stock
1 : ¥2.55000
Cut Tape (CT)
10,000 : ¥0.33267
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
310mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
0.95 nC @ 10 V
±20V
23.2 pF @ 25 V
-
380mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSH203,215
MOSFET P-CH 30V 470MA TO236AB
Nexperia USA Inc.
70,484
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.85790
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
30 V
470mA (Ta)
1.8V, 4.5V
900mOhm @ 280mA, 4.5V
680mV @ 1mA (Typ)
2.2 nC @ 4.5 V
±8V
110 pF @ 24 V
-
417mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.