Single FETs, MOSFETs

Results: 4
Manufacturer
onsemiRohm SemiconductorTexas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
25 V60 V
Current - Continuous Drain (Id) @ 25°C
680mA (Ta)10A (Ta)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 28A, 10V84mOhm @ 10A, 10V450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.3V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 4.5 V15.2 nC @ 10 V53 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V1200 pF @ 30 V4230 pF @ 30 V
Power Dissipation (Max)
350mW (Ta)3.1W (Ta), 195W (Tc)26W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-VSON-CLIP (5x6)SOT-23-3TO-252
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV303N
MOSFET N-CH 25V 680MA SOT23
onsemi
241,059
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.59362
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
680mA (Ta)
2.7V, 4.5V
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3 nC @ 4.5 V
±8V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
CSD18540Q5B
CSD18540Q5B
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
11,260
In Stock
1 : ¥19.37000
Cut Tape (CT)
2,500 : ¥8.74886
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
2.2mOhm @ 28A, 10V
2.3V @ 250µA
53 nC @ 10 V
±20V
4230 pF @ 30 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
8-Power TDFN
CSD18540Q5BT
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
3,240
In Stock
1 : ¥24.14000
Cut Tape (CT)
250 : ¥15.56460
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
2.2mOhm @ 28A, 10V
2.3V @ 250µA
53 nC @ 10 V
±20V
4230 pF @ 30 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
RB098BM-40FNSTL
RD3L01BATTL1
PCH -60V -10A POWER MOSFET - RD3
Rohm Semiconductor
4,085
In Stock
1 : ¥9.11000
Cut Tape (CT)
2,500 : ¥3.78014
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
10A (Ta)
4.5V, 10V
84mOhm @ 10A, 10V
2.5V @ 1mA
15.2 nC @ 10 V
±20V
1200 pF @ 30 V
-
26W (Ta)
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.