Single FETs, MOSFETs

Results: 15
Manufacturer
GeneSiC SemiconductorMicrochip TechnologyQorvoWolfspeed, Inc.
Series
-C2M™G2R™G3R™
Packaging
BulkTube
Technology
SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V1700 V3300 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)7A (Tc)7.6A (Tc)9A (Tc)59A (Tc)61A (Tc)63A (Tc)68A (Tc)72A (Tc)90A (Tc)100A (Tc)124A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V15V20V
Rds On (Max) @ Id, Vgs
26mOhm @ 75A, 15V36mOhm @ 50A, 15V45mOhm @ 30A, 20V50mOhm @ 40A, 20V58mOhm @ 40A, 15V59mOhm @ 50A, 20V70mOhm @ 50A, 20V515mOhm @ 5A, 12V585mOhm @ 4A, 15V940mOhm @ 2.5A, 20V1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
2.69V @ 12mA2.7V @ 15mA2.7V @ 2mA2.7V @ 8mA3.25V @ 100µA (Typ)3.25V @ 2.5mA (Typ)3.5V @ 10mA (Typ)4V @ 18mA5.5V @ 500µA6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 20 V18 nC @ 15 V27.5 nC @ 15 V155 nC @ 15 V178 nC @ 20 V182 nC @ 15 V188 nC @ 20 V340 nC @ 20 V400 nC @ 15 V
Vgs (Max)
±15V+23V, -10V+25V, -10V±25V
Input Capacitance (Ciss) (Max) @ Vds
111 pF @ 1000 V184 pF @ 1360 V454 pF @ 1000 V740 pF @ 100 V3300 pF @ 1000 V3672 pF @ 1000 V3901 pF @ 800 V4523 pF @ 1000 V7301 pF @ 1000 V10187 pF @ 1000 V
Power Dissipation (Max)
44W (Tc)68W (Tc)88W (Tc)100W (Tc)278W (Tc)370W (Tc)400W (Tc)438W (Tc)520W (Tc)523W (Tc)536W (Tc)809W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
D3PAKSOT-227TO-247-3TO-247-4TO-247-4L
Package / Case
SOT-227-4, miniBLOCTO-247-3TO-247-4TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
15Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
8,609
In Stock
1 : ¥44.66000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,810
In Stock
1 : ¥59.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
1,603
In Stock
1 : ¥184.97000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
400W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R45MT17D
SIC MOSFET N-CH 61A TO247-3
GeneSiC Semiconductor
1,003
In Stock
1 : ¥268.71000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
779
In Stock
1 : ¥271.50000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
GeneSiC Semiconductor
1,142
In Stock
1 : ¥880.10000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
124A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
809W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
C2D10120D
C2M0045170D
SICFET N-CH 1700V 72A TO247-3
Wolfspeed, Inc.
450
In Stock
1 : ¥963.10000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
72A (Tc)
20V
70mOhm @ 50A, 20V
4V @ 18mA
188 nC @ 20 V
+25V, -10V
3672 pF @ 1000 V
-
520W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
GA100JT12-227
G3R20MT17N
SIC MOSFET N-CH 100A SOT227
GeneSiC Semiconductor
158
In Stock
1 : ¥1,112.11000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
100A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
523W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-247-3
MSC750SMA170B
SICFET N-CH 1700V 7A TO247-3
Microchip Technology
232
In Stock
1 : ¥44.66000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1360 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-4
MSC750SMA170B4
TRANS SJT 1700V TO247-4
Microchip Technology
210
In Stock
1 : ¥46.06000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1360 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
TO-247-3L
UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3
Qorvo
75,278
In Stock
1 : ¥50.24000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1700 V
7.6A (Tc)
12V
515mOhm @ 5A, 12V
6V @ 10mA
27.5 nC @ 15 V
±25V
740 pF @ 100 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2M0045170P
C2M0045170P
SICFET N-CH 1700V 72A TO247-4
Wolfspeed, Inc.
0
In Stock
Check Lead Time
1 : ¥925.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
72A (Tc)
20V
59mOhm @ 50A, 20V
4V @ 18mA
188 nC @ 20 V
+25V, -10V
3672 pF @ 1000 V
-
520W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
TO-247-4
MSC035SMA170B4
MOSFET SIC 1700V 35 MOHM TO-247-
Microchip Technology
21
In Stock
1 : ¥343.17000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
D3PAK
MSC035SMA170S
MOSFET SIC 1700V 35 MOHM TO-268
Microchip Technology
25
In Stock
1 : ¥340.71000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
59A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
278W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
0
In Stock
Check Lead Time
1 : ¥2,427.41000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
50mOhm @ 40A, 20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
-
536W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
Showing
of 15

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.