Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedNexperia USA Inc.onsemiToshiba Semiconductor and StorageVishay Siliconix
Series
-PowerTrench®TrenchFET®TrenchMOS™U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)320mA (Ta)4.5A (Ta)10A (Ta)18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4V, 10V4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
9.4mOhm @ 15A, 10V20mOhm @ 4A, 10V48mOhm @ 4.5A, 4.5V1.6Ohm @ 300mA, 10V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
1.5V @ 250µA2V @ 1mA2.2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V14 nC @ 4.5 V20.4 nC @ 4.5 V110 nC @ 10 V
Vgs (Max)
±8V+20V, -25V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
24.6 pF @ 25 V50 pF @ 10 V1150 pF @ 15 V1160 pF @ 10 V4280 pF @ 15 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)310mW (Ta)1.25W (Ta)1.6W (Ta)3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-UDFNB (2x2)PowerPAK® 1212-8SOT-23-3SOT-323SuperSOT™-6
Package / Case
6-WDFN Exposed PadPowerPAK® 1212-8SC-70, SOT-323SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138PW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
935,882
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.39030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
41,445
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18666
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
10A (Ta)
4V, 10V
20mOhm @ 4A, 10V
2.2V @ 250µA
20.4 nC @ 4.5 V
+20V, -25V
1150 pF @ 15 V
-
1.25W (Ta)
150°C (TJ)
-
-
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
PowerPAK 1212-8
SIS413DN-T1-GE3
MOSFET P-CH 30V 18A PPAK 1212-8
Vishay Siliconix
56,729
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77229
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
18A (Tc)
4.5V, 10V
9.4mOhm @ 15A, 10V
2.5V @ 250µA
110 nC @ 10 V
±20V
4280 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SOT-23-3
DMP510DL-7
MOSFET P-CH 50V 180MA SOT23
Diodes Incorporated
50,962
In Stock
2,313,000
Factory
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.34400
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 1mA
-
±30V
24.6 pF @ 25 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SG6858TZ
FDC638P
MOSFET P-CH 20V 4.5A SUPERSOT6
onsemi
3,306
In Stock
15,000
Factory
1 : ¥4.76000
Cut Tape (CT)
3,000 : ¥1.58988
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
2.5V, 4.5V
48mOhm @ 4.5A, 4.5V
1.5V @ 250µA
14 nC @ 4.5 V
±8V
1160 pF @ 10 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.