Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Series
-FRFET®, SUPERFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)45A (Tc)
Rds On (Max) @ Id, Vgs
55mOhm @ 22.5A, 10V9Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4.8V @ 5.2mA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V85.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V4603 pF @ 400 V
Power Dissipation (Max)
1.25W (Ta)278W (Tc)
Supplier Device Package
8-SOTO-263 (D2PAK)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263
NVB055N60S5F
SUPERFET5 FRFET, 55MOHM, D2PAK
onsemi
800
In Stock
800 : ¥35.53655
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
600 V
45A (Tc)
10V
55mOhm @ 22.5A, 10V
4.8V @ 5.2mA
85.2 nC @ 10 V
±30V
4603 pF @ 400 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8 SO
DMP65H9D0HSS-13
MOSFET BVDSS: 501V~650V SO-8 T&R
Diodes Incorporated
0
In Stock
Check Lead Time
1 : ¥11.17000
Cut Tape (CT)
4,000 : ¥4.62477
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
600 V
300mA (Ta)
10V
9Ohm @ 300mA, 10V
4V @ 250µA
17 nC @ 10 V
±30V
740 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.