Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

RE1C002UNTCL MOSFET N-CH 20V 200MA EMT3F Rohm Semiconductor	1,458,295 In Stock	1 : ¥1.89000 Cut Tape (CT) 3,000 : ¥0.31154 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.2V, 2.5V	1.2Ohm @ 100mA, 2.5V	1V @ 1mA	-	±8V	25 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
CSD18540Q5B MOSFET N-CH 60V 100A 8VSON Texas Instruments	11,230 In Stock	1 : ¥19.38000 Cut Tape (CT) 2,500 : ¥8.74943 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Ta)	4.5V, 10V	2.2mOhm @ 28A, 10V	2.3V @ 250µA	53 nC @ 10 V	±20V	4230 pF @ 30 V	-	3.1W (Ta), 195W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
EPC2012C GANFET N-CH 200V 5A DIE OUTLINE EPC	7,350 In Stock	1 : ¥23.97000 Cut Tape (CT) 2,500 : ¥10.80774 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	5A (Ta)	5V	100mOhm @ 3A, 5V	2.5V @ 1mA	1.3 nC @ 5 V	+6V, -4V	140 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
FDMC008N08C MOSFET N-CHANNEL 80V 60A 8PQFN onsemi	1,009 In Stock 24,000 Factory	1 : ¥15.43000 Cut Tape (CT) 3,000 : ¥6.95998 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	60A (Tc)	6V, 10V	7.8mOhm @ 21A, 10V	4V @ 120µA	29 nC @ 10 V	±20V	2150 pF @ 40 V	-	57W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerWDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.