Single Bipolar Transistors

Results: 2
Manufacturer
onsemiSTMicroelectronics
Packaging
TrayTube
Voltage - Collector Emitter Breakdown (Max)
250 V400 V
Vce Saturation (Max) @ Ib, Ic
1.8V @ 250mA, 10A3.4V @ 150mA, 15A
Current - Collector Cutoff (Max)
100µA1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 5A, 10V400 @ 10A, 5V
Power - Max
135 W175 W
Operating Temperature
-65°C ~ 200°C (TJ)175°C (TJ)
Package / Case
TO-204AA, TO-3TO-247-3
Supplier Device Package
TO-204 (TO-3)TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TO-247-3 HiP
BU931P
TRANS NPN DARL 400V 15A TO247-3
STMicroelectronics
482
In Stock
1 : ¥37.43000
Tube
-
Tube
Active
NPN - Darlington
15 A
400 V
1.8V @ 250mA, 10A
100µA
300 @ 5A, 10V
135 W
-
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
TO-3 Pkg
MJ11022G
TRANS NPN DARL 250V 15A TO204
onsemi
0
In Stock
300
Factory
Check Lead Time
1 : ¥72.98000
Tray
-
Tray
Active
NPN - Darlington
15 A
250 V
3.4V @ 150mA, 15A
1mA
400 @ 10A, 5V
175 W
-
-65°C ~ 200°C (TJ)
-
-
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
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of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.