Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

2N2222AUB TRANS NPN 50V 0.8A 3SMD Microchip Technology	7,346 In Stock	1 : ¥47.37000 Bulk	2N2222	Bulk	Active	NPN	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	-	-	Surface Mount	3-SMD, No Lead	UB
JANSR2N2222AUB TRANS NPN 50V 0.8A UB Microchip Technology	0 In Stock Check Lead Time	50 : ¥489.31020 Tray	-	Tray	Active	NPN	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Military	MIL-PRF-19500/255	Surface Mount	3-SMD, No Lead	UB

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Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.