Single Bipolar Transistors

Results: 4
Packaging
BulkCut Tape (CT)Tape & Reel (TR)Tube
Transistor Type
NPNNPN - DarlingtonPNPPNP - Darlington
Current - Collector (Ic) (Max)
200 mA5 A
Voltage - Collector Emitter Breakdown (Max)
40 V100 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA400mV @ 5mA, 50mA4V @ 20mA, 5A
Current - Collector Cutoff (Max)
500µA-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V1000 @ 3A, 3V
Power - Max
625 mW2 W
Frequency - Transition
250MHz300MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-220TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
TIP122G
TRANS NPN DARL 100V 5A TO220
onsemi
13,701
In Stock
1 : ¥6.07000
Tube
-
Tube
Active
NPN - Darlington
5 A
100 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP127G
TRANS PNP DARL 100V 5A TO220
onsemi
3,701
In Stock
1 : ¥6.98000
Tube
-
Tube
Active
PNP - Darlington
5 A
100 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-92-3 Formed Leads
2N3906TF
TRANS PNP 40V 0.2A TO92-3
onsemi
64,190
In Stock
34,000
Factory
1 : ¥2.63000
Cut Tape (CT)
2,000 : ¥0.44162
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
2N3904BU
TRANS NPN 40V 0.2A TO92-3
onsemi
0
In Stock
Check Lead Time
1 : ¥2.87000
Bulk
-
Bulk
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.