Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

2N2222A PBFREE TRANS NPN 40V 0.8A TO18 Central Semiconductor Corp	5,511 In Stock	1 : ¥19.38000 Bulk	-	Bulk	Active	NPN	800 mA	40 V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	500 mW	300MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N2222A TRANS NPN 50V 0.8A TO18 Microchip Technology	7 In Stock	1 : ¥23.81000 Bulk	-	Bulk	Active	NPN	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18

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Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.