Single Bipolar Transistors

Results: 2
Packaging
BulkTube
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
200 mA1 A
Voltage - Collector Emitter Breakdown (Max)
40 V400 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA1V @ 200mA, 1A
Current - Collector Cutoff (Max)
1mA-
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA, 10V100 @ 10mA, 1V
Power - Max
625 mW2 W
Frequency - Transition
10MHz250MHz
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-220TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N3906BU
BJT TO92 40V PNP 0.625W 150C
onsemi
30,570
In Stock
1 : ¥2.79000
Bulk
-
Bulk
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-220-3
TIP50G
TRANS NPN 400V 1A TO220
onsemi
745
In Stock
1 : ¥6.57000
Tube
-
Tube
Active
NPN
1 A
400 V
1V @ 200mA, 1A
1mA
30 @ 300mA, 10V
2 W
10MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
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of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.