Phototransistors

Results: 4
Manufacturer
ams-OSRAM USA INC.onsemi
Packaging
BulkCut Tape (CT)Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max)
30 V35 V
Current - Collector (Ic) (Max)
16 mA50 mA
Current - Dark (Id) (Max)
50 nA100 nA
Viewing Angle
24°50°
Power - Max
100 mW200 mW
Operating Temperature
-40°C ~ 100°C-
Package / Case
RadialRadial, 5mm Dia (T 1 3/4)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Dark (Id) (Max)
Wavelength
Viewing Angle
Power - Max
Mounting Type
Orientation
Operating Temperature
Package / Case
SFH 300 FA-3/4
SFH 300 FA-3/4
SENSOR PHOTO 880NM TOP VIEW RAD
ams-OSRAM USA INC.
30,935
In Stock
1 : ¥5.78000
Bulk
-
Bulk
Active
35 V
50 mA
50 nA
880nm
50°
200 mW
Through Hole
Top View
-40°C ~ 100°C
Radial
QSD122,QSD123,QSD124
QSD123
SENSOR PHOTO 880NM TOP VIEW RAD
onsemi
9,548
In Stock
1 : ¥6.29000
Bulk
-
Bulk
Active
30 V
-
100 nA
880nm
24°
100 mW
Through Hole
Top View
-40°C ~ 100°C
Radial, 5mm Dia (T 1 3/4)
QSD122,QSD123,QSD124
QSD124
SENSOR PHOTO 880NM TOP VIEW RAD
onsemi
4,548
In Stock
186,250
Factory
1 : ¥7.91000
Bulk
-
Bulk
Active
30 V
-
100 nA
880nm
24°
100 mW
Through Hole
Top View
-40°C ~ 100°C
Radial, 5mm Dia (T 1 3/4)
QSD122,QSD123,QSD124
QSD123A4R0
SENSOR PHOTO 880NM TOP VIEW RAD
onsemi
2,618
In Stock
1 : ¥7.14000
Cut Tape (CT)
1,200 : ¥2.40045
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
30 V
16 mA
100 nA
880nm
24°
100 mW
Through Hole
Top View
-
Radial, 5mm Dia (T 1 3/4)
Showing
of 4

Phototransistors


Products in the phototransistor family are discrete light sensitive components which behave in similar fashion to a bipolar transistor, but use incident light instead of an electrical current applied through a device terminal to cause the device to conduct. Compared to photodiodes, phototransistors generally produce a much larger output current for the same intensity of incident light, though are slower to respond to changes in light intensity. These differences result in phototransistors being simpler to apply, but less useful for high speed operation.