IGBT Modules

Results: 2
Configuration
Full BridgeHalf Bridge
Voltage - Collector Emitter Breakdown (Max)
650 V1200 V
Current - Collector (Ic) (Max)
40 A80 A
Current - Collector Cutoff (Max)
40 A80 A
NTC Thermistor
NoYes
Supplier Device Package
SP1SP3F
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Media
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Price
Series
Package
Product Status
IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2
In Stock
1 : ¥1,078.54000
Tube
Tube
Active
Trench
Half Bridge
650 V
80 A
-
80 A
Standard
No
-
Chassis Mount
Module
SP1
0
In Stock
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7 : ¥1,101.77714
Tube
Tube
Active
Trench
Full Bridge
1200 V
40 A
-
40 A
Standard
Yes
-
Chassis Mount
Module
SP3F
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IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.