Gate Drivers

Results: 2
Manufacturer
Analog Devices Inc.Littelfuse Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Channel Type
IndependentSynchronous
Gate Type
IGBT, N-Channel MOSFETN-Channel MOSFET
Voltage - Supply
6V ~ 9.5V10V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2.5V-
Current - Peak Output (Source, Sink)
2.4A, 2.4A4.5A, 4.5A
High Side Voltage - Max (Bootstrap)
42 V600 V
Rise / Fall Time (Typ)
12ns, 8ns25ns, 20ns
Operating Temperature
-40°C ~ 125°C (TA)-40°C ~ 125°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package
8-MSOP-EP8-SOIC
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOIC(N)-8
LF2190NTR
GATE DRIVER HIGH/LOW SIDE 3.5A
Littelfuse Inc.
14,565
In Stock
30,000
Factory
1 : ¥15.35000
Cut Tape (CT)
2,500 : ¥7.04178
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Independent
2
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
4.5A, 4.5A
Non-Inverting
600 V
25ns, 20ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
8-MSOP-EP
LTC4442EMS8E#PBF
IC GATE DRVR HALF-BRIDGE 8MSOP
Analog Devices Inc.
8,680
In Stock
1 : ¥33.82000
Tube
-
Tube
Active
Not Verified
Half-Bridge
Synchronous
2
N-Channel MOSFET
6V ~ 9.5V
-
2.4A, 2.4A
Non-Inverting
42 V
12ns, 8ns
-40°C ~ 125°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-MSOP-EP
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of 2

Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.