FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

EM6M2T2R MOSFET N/P-CH 20V 0.2A EMT6 Rohm Semiconductor	114,542 In Stock	1 : ¥2.96000 Cut Tape (CT) 8,000 : ¥1.18017 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	20V	200mA	1Ohm @ 200mA, 4V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
EM6K6T2R MOSFET 2N-CH 20V 0.3A EMT6 Rohm Semiconductor	11,234 In Stock	1 : ¥3.94000 Cut Tape (CT) 8,000 : ¥1.01991 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	300mA	1Ohm @ 300mA, 4V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
SSM6L56FE,LM MOSFET N/P-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : ¥2.87000 Cut Tape (CT) 4,000 : ¥0.51375 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate, 1.5V Drive	20V	800mA (Ta)	235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V	1V @ 1mA	1nC @ 10V	55pF @ 10V, 100pF @ 10V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.