FET, MOSFET Arrays

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Configuration
2 N-Channel (Dual) AsymmetricalN and P-Channel
Drain to Source Voltage (Vdss)
30V40V
Current - Continuous Drain (Id) @ 25°C
9A, 6.5A13A, 25A
Rds On (Max) @ Id, Vgs
8mOhm @ 13A, 10V24mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 20V1765pF @ 15V
Power - Max
1W1.3W
Package / Case
8-PowerTDFNTO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package
Power56TO-252 (DPAK)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FDMS36 Series
FDMS3664S
MOSFET 2N-CH 30V 13A/25A POWER56
onsemi
2,748
In Stock
1 : ¥12.31000
Cut Tape (CT)
3,000 : ¥5.09302
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Asymmetrical
Logic Level Gate
30V
13A, 25A
8mOhm @ 13A, 10V
2.7V @ 250µA
29nC @ 10V
1765pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
TO-252-5
FDD8424H
MOSFET N/P-CH 40V 9A/6.5A TO252
onsemi
12
In Stock
1 : ¥10.84000
Cut Tape (CT)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
40V
9A, 6.5A
24mOhm @ 9A, 10V
3V @ 250µA
20nC @ 10V
1000pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
TO-252 (DPAK)
Showing
of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.