FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

NDS9948 MOSFET 2P-CH 60V 2.3A 8SOIC onsemi	1,416 In Stock	1 : ¥5.66000 Cut Tape (CT) 2,500 : ¥2.14212 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	60V	2.3A	250mOhm @ 2.3A, 10V	3V @ 250µA	13nC @ 10V	394pF @ 30V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI4564DY-T1-GE3 MOSFET N/P-CH 40V 10A/9.2A 8SOIC Vishay Siliconix	1,446 In Stock	1 : ¥10.92000 Cut Tape (CT) 2,500 : ¥4.52713 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	40V	10A, 9.2A	17.5mOhm @ 8A, 10V	2V @ 250µA	31nC @ 10V	855pF @ 20V	3.1W, 3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.