FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SI3993CDV-T1-GE3 MOSFET 2P-CH 30V 2.9A 6TSOP Vishay Siliconix	47,508 In Stock	1 : ¥4.02000 Cut Tape (CT) 3,000 : ¥1.34538 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	-	30V	2.9A	111mOhm @ 2.5A, 10V	2.2V @ 250µA	8nC @ 10V	210pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI4590DY-T1-GE3 MOSFET N/P-CH 100V 3.4A 8SOIC Vishay Siliconix	3,582 In Stock	1 : ¥7.55000 Cut Tape (CT) 2,500 : ¥2.85950 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	N and P-Channel	-	100V	3.4A, 2.8A	57mOhm @ 2A, 10V	2.5V @ 250µA	11.5nC @ 10V	360pF @ 50V	2.4W, 3.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.