Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
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KSD1616AGBU

DigiKey Part Number
KSD1616AGBU-ND
Manufacturer
Manufacturer Product Number
KSD1616AGBU
Description
TRANS NPN 60V 1A TO-92-3
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Datasheet
 Datasheet
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Mfr
Power - Max
750 mW
Packaging
Bulk
Frequency - Transition
160MHz
Part Status
Active
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
1 A
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Voltage - Collector Emitter Breakdown (Max)
60 V
Supplier Device Package
TO-92-3
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
BCX38CDiodes Incorporated37,596BCX38C-ND¥10.50000Similar
BCX38CSTZDiodes Incorporated35431-BCX38CSTZCT-ND¥10.75000Similar
In-Stock: 20,880
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All prices are in CNY
Bulk
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥4.47000¥4.47
10¥2.75400¥27.54
100¥1.75240¥175.24
500¥1.31840¥659.20
1,000¥1.17823¥1,178.23
2,000¥1.06022¥2,120.44
5,000¥0.93233¥4,661.65
10,000¥0.85321¥8,532.10
50,000¥0.71470¥35,735.00
Manufacturers Standard Package