Single IGBTs

Results: 7
Product Status
ActiveObsolete
Voltage - Collector Emitter Breakdown (Max)
650 V1200 V
Current - Collector (Ic) (Max)
30 A50 A80 A100 A
Current - Collector Pulsed (Icm)
60 A100 A120 A160 A180 A200 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 15A2.3V @ 15V, 40A2.4V @ 15V, 25A2.4V @ 15V, 40A2.4V @ 15V, 50A2.4V @ 15V, 60A
Power - Max
48 W230 W341 W348 W357 W375 W428 W
Switching Energy
270µJ (on), 86µJ (off)500µJ (on), 400µJ (off)770µJ (on), 550µJ (off)920µJ (on), 530µJ (off)1.15mJ (on), 350µJ (off)1.44mJ (on), 550µJ (off)1.96mJ (on), 540µJ (off)
Gate Charge
60 nC61 nC95 nC204 nC219 nC287 nC341 nC
Td (on/off) @ 25°C
6ns/55ns19ns/128ns42ns/142ns58ns/245ns58ns/328ns65ns/308ns73ns/269ns
Test Condition
400V, 15A, 10Ohm, 15V400V, 40A, 10Ohm, 15V400V, 40A, 7.9Ohm, 15V400V, 50A, 7.9Ohm, 15V400V, 60A, 7Ohm, 15V600V, 25A, 23Ohm, 15V600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)
60 ns80 ns100 ns145 ns150 ns205 ns
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
Package / Case
TO-220-3 Full Pack, Isolated TabTO-247-3
Supplier Device Package
ITO-220ABTO-247
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DGTD65T15H2TF
DGTD65T15H2TF
IGBT FIELD STP 650V 30A ITO220AB
Diodes Incorporated
1,000
In Stock
1 : ¥15.84000
Tube
-
Tube
Active
Field Stop
650 V
30 A
60 A
2V @ 15V, 15A
48 W
270µJ (on), 86µJ (off)
Standard
61 nC
19ns/128ns
400V, 15A, 10Ohm, 15V
150 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
TO-247-3
DGTD120T25S1PT
IGBT 1200V-X TO247 TUBE 0.45K
Diodes Incorporated
447
In Stock
82,350
Factory
1 : ¥64.03000
Tube
-
Tube
Active
Field Stop
1200 V
50 A
100 A
2.4V @ 15V, 25A
348 W
1.44mJ (on), 550µJ (off)
Standard
204 nC
73ns/269ns
600V, 25A, 23Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD120T40S1PT
IGBT 1200V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
Obsolete
Field Stop
1200 V
80 A
160 A
2.4V @ 15V, 40A
357 W
1.96mJ (on), 540µJ (off)
Standard
341 nC
65ns/308ns
600V, 40A, 10Ohm, 15V
100 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD65T40S1PT
IGBT 600V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Active
-
Tube
Active
Field Stop
650 V
80 A
160 A
2.4V @ 15V, 40A
341 W
1.15mJ (on), 350µJ (off)
Standard
219 nC
58ns/245ns
400V, 40A, 7.9Ohm, 15V
145 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD65T40S2PT
IGBT 600V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
Obsolete
Field Stop
650 V
80 A
120 A
2.3V @ 15V, 40A
230 W
500µJ (on), 400µJ (off)
Standard
60 nC
6ns/55ns
400V, 40A, 10Ohm, 15V
60 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD65T50S1PT
IGBT 600V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
Obsolete
Field Stop
650 V
100 A
200 A
2.4V @ 15V, 50A
375 W
770µJ (on), 550µJ (off)
Standard
287 nC
58ns/328ns
400V, 50A, 7.9Ohm, 15V
80 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
TO-247-3
DGTD65T60S2PT
IGBT 600V-X TO247 TUBE 0.45K
Diodes Incorporated
0
In Stock
Obsolete
-
Tube
Obsolete
Field Stop
650 V
100 A
180 A
2.4V @ 15V, 60A
428 W
920µJ (on), 530µJ (off)
Standard
95 nC
42ns/142ns
400V, 60A, 7Ohm, 15V
205 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.