RF FETs, MOSFETs

Results: 3
Technology
GaNHEMT
Frequency
960MHz ~ 1.215GHz1.03GHz ~ 1.09GHz
Gain
18.1dB18.5dB18.75dB
Current - Test
10 mA40 mA60 mA
Power - Output
19W35W150W
Voltage - Rated
125 V150 V
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Voltage - Test
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Current - Test
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GaN
-
1.03GHz ~ 1.09GHz
18.5dB
50 V
-
-
40 mA
35W
150 V
Module
-
0
In Stock
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Active
GaN
-
960MHz ~ 1.215GHz
18.1dB
50 V
-
-
10 mA
19W
150 V
Module
-
0
In Stock
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Bulk
Active
HEMT
-
1.03GHz ~ 1.09GHz
18.75dB
50 V
-
-
60 mA
150W
125 V
Module
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RF FETs, MOSFETs


RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.