IGBT Modules

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

VS-GT180DA120U IGBT MOD 1200V 281A 1087W SOT227 Vishay General Semiconductor - Diodes Division	322 In Stock	1 : ¥368.61000 Tube	HEXFRED®	Tube	Active	Trench Field Stop	Single	1200 V	281 A	1087 W	2.05V @ 15V, 100A	100 µA	9.35 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GT100DA120UF IGBT MOD 1200V 187A 890W SOT227 Vishay General Semiconductor - Diodes Division	195 In Stock	1 : ¥330.88000 Bulk	HEXFRED®	Bulk	Active	Trench	Single	1200 V	187 A	890 W	2.55V @ 15V, 100A	100 µA	6.15 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GT80DA120U IGBT MOD 1200V 139A 658W SOT227 Vishay General Semiconductor - Diodes Division	38 In Stock	1 : ¥302.02000 Bulk	HEXFRED®	Bulk	Active	Trench	Single	1200 V	139 A	658 W	2.55V @ 15V, 80A	100 µA	4.4 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GT90DA60U MODULES IGBT - SOT-227 IGBT Vishay General Semiconductor - Diodes Division	0 In Stock Check Lead Time	160 : ¥221.08138 Bulk	HEXFRED®	Bulk	Active	Trench Field Stop	Single	600 V	146 A	446 W	2.15V @ 15V, 100A	100 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-50MT060PHTAPBF MODULES IGBT - MTP SWITCH Vishay General Semiconductor - Diodes Division	0 In Stock Check Lead Time	105 : ¥463.69590 Bulk	HEXFRED®	Bulk	Active	Trench Field Stop	Half Bridge	600 V	121 A	305 W	1.64V @ 15V, 50A	100 µA	6000 pF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Through Hole	12-MTP Module	12-MTP
VS-20MT120PFP MODULES IGBT - MTP SWITCH Vishay General Semiconductor - Diodes Division	0 In Stock Check Lead Time	105 : ¥599.08181 Bulk	HEXFRED®	Bulk	Active	Trench Field Stop	Full Bridge	1200 V	57 A	240 W	2.16V @ 15V, 20A	200 µA	1430 pF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	16-MTP Module	16-MTP
VS-GB55LA120UX IGBT MOD 1200V 84A 431W SOT227 Vishay General Semiconductor - Diodes Division	0 In Stock	Obsolete	HEXFRED®	Tube	Obsolete	NPT	Single	1200 V	84 A	431 W	-	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GB55NA120UX IGBT MOD 1200V 84A 431W SOT227 Vishay General Semiconductor - Diodes Division	0 In Stock	Obsolete	HEXFRED®	Tube	Obsolete	NPT	Single	1200 V	84 A	431 W	-	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-40MT060WFHT MODULE IGBT MTP SWITCH Vishay General Semiconductor - Diodes Division	0 In Stock	Obsolete	HEXFRED®	Tray	Obsolete	-	Full Bridge	600 V	67 A	284 W	-	250 µA	-	Standard	Yes	150°C (TJ)	Chassis Mount	12-MTP Module	12-MTP

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IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.