DMG1026UV Datasheet

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DMG1026UV
Document number: DS35068 Rev. 8 - 2
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www.diodes.com
August 2016
© Diodes Incorporated
DMG1026UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
ID
TA = +25°C
60V
1.8Ω @ VGS = 10V
440mA
2.1Ω @ VGS = 4.5V
410mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), and yet maintain superior switching
performance, making it ideal for high-efficiency power management
applications.
Applications
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
DC-DC Converters
Power Management Functions
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMG1026UV-7
SOT563
3,000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information (Note 5)
Date Code Key
Year
2009
~
2016
2017
2018
2019
2020
2021
2022
2023
Code
W
~
D
E
F
G
H
I
J
K
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Note: 5. Product manufactured with Date Code D9 (September, 2016) and newer are built with additional Pin 1 dot in marking information. Product manufactured
prior to Date Code D9 are built without Pin 1 dot.
SOT563
Top View
Top View
Pin Definition
Bottom View
ESD PROTECTED TO 2kV
UA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
SOT563
D1
S1
G1
Gate Protection
Diode
D2
S2
G2
Gate Protection
Diode
Equivalent Circuit
Q1 N-CHANNEL
Q2 N-CHANNEL
S1
G1
D2
D1
G2
S2
1
2
3
6
5
4
UA1 YM
1
2
3
6
5
4
ms DMG1026uv
DMG1026UV
Document number: DS35068 Rev. 8 - 2
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© Diodes Incorporated
DMG1026UV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
ID
410
300
mA
Continuous Drain Current (Note 7) VGS = 10V
t10s
TA = +25°C
TA = +85°C
ID
440
320
mA
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +85°C
ID
380
270
mA
Continuous Drain Current (Note 7) VGS = 4.5V
t10s
TA = +25°C
TA = +85°C
ID
410
295
mA
Pulsed Drain Current (Note 8)
IDM
1.0
A
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 6)
PD
0.58
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
RθJA
213
°C/W
Power Dissipation (Note 7) t10s
PD
0.65
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) t10s
RθJA
192
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
60
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1.0
µA
VDS = 50V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±50
nA
VGS = ±5V, VDS = 0V
—
—
±150
nA
VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(th)
0.5
—
1.8
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
—
1.2
1.8
Ω
VGS = 10V, ID = 500mA
—
1.4
2.1
VGS = 4.5V, ID = 200mA
Forward Transfer Admittance
|Yfs|
80
580
—
mS
VDS = 10V, ID = 200mA
Continuous Source Current (Note 9)
IS
—
—
200
mA
-
Diode Forward Voltage
VSD
—
0.8
1.3
V
VGS = 0V, IS = 200mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
—
32
—
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
4.4
—
Reverse Transfer Capacitance
Crss
—
2.9
—
Gate Resistance
Rg
—
126
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
0.45
—
pC
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Qgs
—
0.08
—
Gate-Drain Charge
Qgd
—
0.08
—
Turn-On Delay Time
tD(on)
—
3.4
—
ns
VGS = 10V, VDS = 30V,
RL = 150Ω, RG = 25Ω,
ID = 200mA
Turn-On Rise Time
tr
—
3.4
—
ns
Turn-Off Delay Time
tD(off)
—
26.4
—
ns
Turn-Off Fall Time
tf
—
16.3
—
ns
Notes: 6. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t ≤ 10s.
8. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
\XY‘ 1:2 DMG1026UV // // \\
DMG1026UV
Document number: DS35068 Rev. 8 - 2
3 of 6
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August 2016
© Diodes Incorporated
DMG1026UV
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
Figure 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 4.5V
GS
0
200
400
600
800
1,000
0 0.5 1 1.5 2 2.5 3 3.5 4
Figure 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (mA)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
1
2
3
0 200 400 600 800 1,000
I , DRAIN-SOURCE CURRENT (mA)
DFigure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 10V
GS
0
1
2
3
4
5
0 200 400 600 800 1,000
I , DRAIN CURRENT (mA)
D
Figure 4 Typical On-Resistance
vs. Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
0.5
1.0
1.5
2.0
2.5
Figure 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 200mA
GS
D
V = 10V
I = 500mA
GS
D
0
0.5
1.0
1.5
2.0
2.5
3.0
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
Figure 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = 10V
I = 500mA
GS
D
V = 4.5V
I = 200mA
GS
D
DMG1026UV
DMG1026UV
Document number: DS35068 Rev. 8 - 2
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© Diodes Incorporated
DMG1026UV
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
200
400
600
800
1,000
0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I , SOURCE CURRENT (mA)
S
T = 25°C
A
1
10
100
0 5 10 15 20 25 30 35 40
Figure 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
f = 1MHz
Ciss
Crss
Coss
0 5 10 15 20 25 30 35 40 45 50
Figure 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I , LEAKAGE CURRENT (nA)
DSS
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 0.2 0.4 0.6 0.8 1.0 1.2
Q (nC)
g, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
2
4
6
8
10
V GATE THRESHOLD VOLTAGE (V)
GS
V = 15V
I = A
DS
D
800m
0.001
0.01
0.1
1
10
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I , DRAIN CURRENT (A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
WP = 10ms
WP = 1ms
W
P = 100µs
W
P = 10 s
Wµ
ms DMG1026uv -’|F-__ r‘II—II—I w— Hfi\me T I+++I +4 |<——% 'iul="">
DMG1026UV
Document number: DS35068 Rev. 8 - 2
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© Diodes Incorporated
DMG1026UV
0.001 0.01 0.1 1 10 100 1,000
Figure 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.000001 0.00010.00001
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA R
R = 220°C/W
JA
JA
P(pk) t1
t2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
Dim
Min
Max
Typ
A
0.15
0.30
0.20
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
-
-
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.55
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
0.11
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
A
M
L
BC
H
K
G
D
X
Z
Y
C1
C2
C2
G
DMG1026UV
DMG1026UV
Document number: DS35068 Rev. 8 - 2
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August 2016
© Diodes Incorporated
DMG1026UV
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