AMC1200(B) Datasheet by Texas Instruments [CI]

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0V 250mV
2.55V 2V
1.29V 2V
5V
3.3V
GND1 GND2
VDD1 VDD2
VOUTP
VOUTN
VINP
VINN
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AMC1200
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SBAS542D –APRIL 2011–REVISED JULY 2015
AMC1200/B Fully-Differential Isolation Amplifier
1 Features 3 Description
The AMC1200 and AMC1200B are precision isolation
1• ±250-mV Input Voltage Range Optimized for amplifiers with an output separated from the input
Shunt Resistors circuitry by a silicon dioxide (SiO2) barrier that is
• Very Low Nonlinearity: 0.075% Maximum at 5 V highly resistant to magnetic interference. This barrier
• Low Offset Error: 1.5 mV Maximum has been certified to provide galvanic isolation of up
to 4250 VPEAK (AMC1200B) or 4000 VPEAK
• Low Noise: 3.1 mVRMS Typical (AMC1200) according to UL1577 and VDE V 0884-
• Low High-Side Supply Current: 10. Used in conjunction with isolated power supplies,
8 mA Maximum at 5 V these devices prevent noise currents on a high
• Input Bandwidth: 60 kHz Minimum common mode voltage line from entering the local
ground and interfering with or damaging sensitive
• Fixed Gain: 8 (0.5% accuracy) circuitry.
• High Common Mode Rejection Ratio: 108 dB The input of the AMC1200 or AMC1200B is optimized
• 3.3-V Operation on Low-Side for direct connection to shunt resistors or other low
• Certified Galvanic Isolation: voltage level signal sources. The excellent
– UL1577 and VDE V 0884-10 Approved performance of the device supports accurate current
control resulting in system-level power saving and,
– Isolation Voltage: 4250 VPEAK (AMC1200B) especially in motor-control applications, lower torque
– Working Voltage: 1200 VPEAK ripple. The common mode voltage of the output
– Transient Immunity: 10 kV/µs Minimum signal is automatically adjusted to either the 3-V or
5-V low-side supply.
• Typical 10-Year Lifespan at Rated Working
Voltage (see Application Report SLLA197)The AMC1200 and AMC1200B are fully specified
• Fully Specified Over the Extended Industrial over the extended industrial temperature range of
Temperature Range –40°C to 105°C and are available in a wide-body
SOIC-8 package (DWV) and a gullwing-8 package
(DUB).
2 Applications
• Shunt Resistor Based Current Sensing in: Device Information(1)
– Motor Control PART NUMBER PACKAGE BODY SIZE (NOM)
– Green Energy SOP (8) 9.50 mm × 6.57 mm
AMC1200,
AMC1200B
– Frequency Inverters SOIC (8) 5.85 mm × 7.50 mm
– Uninterruptible Power Supplies (1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
7.4 Device Functional Modes........................................ 13
1 Features.................................................................. 18 Application and Implementation ........................ 15
2 Applications ........................................................... 18.1 Application Information............................................ 15
3 Description ............................................................. 18.2 Typical Applications ................................................ 15
4 Revision History..................................................... 29 Power Supply Recommendations...................... 18
5 Pin Configuration and Functions......................... 310 Layout................................................................... 18
6 Specifications......................................................... 410.1 Layout Guidelines ................................................. 18
6.1 Absolute Maximum Ratings ..................................... 410.2 Layout Example .................................................... 19
6.2 ESD Ratings.............................................................. 411 Device and Documentation Support ................. 20
6.3 Recommended Operating Conditions....................... 411.1 Documentation Support ........................................ 20
6.4 Thermal Information.................................................. 411.2 Related Links ........................................................ 20
6.5 Electrical Characteristics........................................... 511.3 Community Resources.......................................... 20
6.6 Typical Characteristics.............................................. 611.4 Trademarks........................................................... 20
7 Detailed Description............................................ 11 11.5 Electrostatic Discharge Caution............................ 20
7.1 Overview ................................................................. 11 11.6 Glossary................................................................ 20
7.2 Functional Block Diagram....................................... 11 12 Mechanical, Packaging, and Orderable
7.3 Feature Description................................................. 11 Information ........................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (September 2013) to Revision D Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
Changes from Revision B (August 2012) to Revision C Page
• Deleted device graphic........................................................................................................................................................... 1
• Added DWV (SOIC-9) package to document......................................................................................................................... 1
• Changed last paragraph of Description section ..................................................................................................................... 1
• Added DWV pin out drawing .................................................................................................................................................. 3
• Added DWV column to Thermal Information table................................................................................................................. 4
• Added row for DWV package to L(I01) and L(I02) parameters in Package Characteristics table....................................... 12
Changes from Revision A (August 2011) to Revision B Page
• Changed Isolation Voltage feature bullet................................................................................................................................ 1
• Added AMC1200B device to data sheet ................................................................................................................................ 1
• Changed title for Figure 25................................................................................................................................................... 10
• Changed CTI parameter minimum value in Electrical Characteristics from ≥175 to ≥400................................................. 12
Changes from Original (April 2011) to Revision A Page
• Changed sign for maximum junction temperature from minus to plus (typo)......................................................................... 4
• Added "0.5-V step" to test condition for Rise/fall time parameter .......................................................................................... 5
• Changed Figure 12................................................................................................................................................................. 6
• Changed Figure 13................................................................................................................................................................. 7
• Changed surge immunity parameter from ±4000 to ±6000.................................................................................................. 12
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1
2
3
4
8
7
6
5
VDD2
VOUTP
VOUTN
GND2
VDD1
VINP
VINN
GND1
1
2
3
4
8
7
6
5
VDD2
VOUTP
VOUTN
GND2
VDD1
VINP
VINN
GND1
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5 Pin Configuration and Functions
DUB Package DWV Package
8-Pin SOP 8-Pin SOIC
Top View Top View
Pin Functions
PIN I/O DESCRIPTION
NO. NAME
1 VDD1 Power High-side power supply
2 VINP Analog input Noninverting analog input
3 VINN Analog input Inverting analog input
4 GND1 Power High-side analog ground
5 GND2 Power Low-side analog ground
6 VOUTN Analog output Inverting analog output
7 VOUTP Analog output Noninverting analog output
8 VDD2 Power Low-side power supply
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6 Specifications
6.1 Absolute Maximum Ratings
Over the operating ambient temperature range, unless otherwise noted.(1)
MIN MAX UNIT
Supply voltage, VDD1 to GND1 or VDD2 to GND2 –0.5 6 V
Analog input voltage at VINP, VINN GND1 – 0.5 VDD1 + 0.5 V
Input current to any pin except supply pins –10 10 mA
Maximum junction temperature, TJMax 150 °C
Storage Temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute
maximum rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE UNIT
Human-body model (HBM) JEDEC standard 22, test method A114- ±2500
C.01(1)
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22- ±1000
C101(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
TAOperating ambient temperature range –40 105 °C
VDD1 High-side power supply 4.5 5 5.5 V
VDD2 Low-side power supply 2.7 5 5.5 V
6.4 Thermal Information
AMC1200, AMC1200B
THERMAL METRIC(1) DUB (SOP) DWV (SOIC) UNIT
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 75.1 102.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 61.6 49.8 °C/W
RθJB Junction-to-board thermal resistance 39.8 56.6 °C/W
ψJT Junction-to-top characterization parameter 27.2 16 °C/W
ψJB Junction-to-board characterization parameter 39.4 55.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
All minimum/maximum specifications at TA= –40°C to 105°C and within the specified voltage range, unless otherwise noted.
Typical values are at TA= 25°C, VDD1 = 5 V, and VDD2 = 3.3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
Maximum input voltage before VINP – VINN ±320 mV
clipping
Differential input voltage VINP – VINN –250 250 mV
VCM Common mode operating range –0.16 VDD1 V
VOS Input offset voltage –1.5 ±0.2 1.5 mV
TCVOS Input offset thermal drift –10 ±1.5 10 µV/K
VIN from 0 V to 5 V at 0 Hz 108 dB
CMRR Common mode rejection ratio VIN from 0 V to 5 V at 50 kHz 95 dB
CIN Input capacitance to GND1 VINP or VINN 3 pF
CIND Differential input capacitance 3.6 pF
RIN Differential input resistance 28 kΩ
Small-signal bandwidth 60 100 kHz
OUTPUT
Nominal gain 8
Initial, at TA= 25°C –0.5% ±0.05% 0.5%
GERR Gain error –1% ±0.05% 1%
TCGERR Gain error thermal drift ±56 ppm/K
4.5 V ≤VDD2 ≤5.5 V –0.075% ±0.015% 0.075%
Nonlinearity 2.7 V ≤VDD2 ≤3.6 V –0.1% ±0.023% 0.1%
Nonlinearity thermal drift 2.4 ppm/K
Output noise VINP = VINN = 0 V 3.1 mVRMS
vs VDD1, 10-kHz ripple 80 dB
PSRR Power-supply rejection ratio vs VDD2, 10-kHz ripple 61 dB
Rise/fall time 0.5-V step, 10% to 90% 3.66 6.6 µs
0.5-V step, 50% to 10%, unfiltered output 1.6 3.3 µs
VIN to VOUT signal delay 0.5-V step, 50% to 50%, unfiltered output 3.15 5.6 µs
0.5-V step, 50% to 90%, unfiltered output 5.26 9.9 µs
CMTI Common mode transient immunity VCM = 1 kV 10 15 kV/µs
2.7 V ≤VDD2 ≤3.6 V 1.15 1.29 1.45 V
Output common mode voltage 4.5 V ≤VDD2 ≤5.5 V 2.4 2.55 2.7 V
Short circuit current 20 mA
ROUT Output resistance 2.5 Ω
POWER SUPPLY
VDD1 High-side supply voltage 4.5 5 5.5 V
VDD2 Low-side supply voltage 2.7 5 5.5 V
IDD1 High-side supply current 5.4 8 mA
2.7 V < VDD2 < 3.6 V 3.8 6 mA
IDD2 Low-side supply current 4.5 V < VDD2 < 5.5 V 4.4 7 mA
PDD1 High-side power dissipation 27 44 mW
2.7 V < VDD2 < 3.6 V 11.4 21.6 mW
PDD2 Low-side power dissipation 4.5 V < VDD2 < 5.5 V 22 38.5 mW
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50
60
70
80
90
100
110
120
130
0.1 1 10 100
Input Frequency (kHz)
CMRR (dB)
−40
−30
−20
−10
0
10
20
30
40
−400 −300 −200 −100 0 100 200 300 400
Input Voltage (mV)
Input Current (µA)
−2
−1.5
−1
−0.5
0
0.5
1
1.5
2
4.5 4.75 5 5.25 5.5
VDD2 (V)
Input Offset (mV)
VDD2 = 4.5 V to 5.5 V
−2
−1.5
−1
−0.5
0
0.5
1
1.5
2
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Input Offset (mV)
−2
−1.5
−1
−0.5
0
0.5
1
1.5
2
4.5 4.75 5 5.25 5.5
VDD1 (V)
Input Offset (mV)
−2
−1.5
−1
−0.5
0
0.5
1
1.5
2
2.7 3 3.3 3.6
VDD2 (V)
Input Offset (mV)
VDD2 = 2.7 V to 3.6 V
AMC1200
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6.6 Typical Characteristics
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
Figure 1. Input Offset vs High-Side Supply Voltage Figure 2. Input Offset vs Low-Side Supply Voltage
Figure 3. Input Offset vs Low-Side Supply Voltage Figure 4. Input Offset vs Temperature
Figure 5. Common Mode Rejection Ratio vs Input Frequency Figure 6. Input Current vs Input Voltage
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−1
−0.8
−0.6
−0.4
−0.2
0
0.2
0.4
0.6
0.8
1
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Gain Error (%)
−80
−70
−60
−50
−40
−30
−20
−10
0
10
1 10 100 500
Input Frequency (kHz)
Normalized Gain (dB)
−1
−0.8
−0.6
−0.4
−0.2
0
0.2
0.4
0.6
0.8
1
2.7 3 3.3 3.6
VDD2 (V)
Gain Error (%)
VDD2 = 2.7 V to 3.6 V
−1
−0.8
−0.6
−0.4
−0.2
0
0.2
0.4
0.6
0.8
1
4.5 4.75 5 5.25 5.5
VDD2 (V)
Gain Error (%)
VDD2 = 4.5 V to 5.5 V
60
70
80
90
100
110
120
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Input Bandwidth (kHz)
−1
−0.8
−0.6
−0.4
−0.2
0
0.2
0.4
0.6
0.8
1
4.5 4.75 5 5.25 5.5
VDD1 (V)
Gain Error (%)
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Typical Characteristics (continued)
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
Figure 7. Input Bandwidth vs Temperature Figure 8. Gain Error vs High-Side Supply Voltage
Figure 9. Gain Error vs Low-Side Supply Voltage Figure 10. Gain Error vs Low-Side Supply Voltage
Figure 11. Gain Error vs Temperature Figure 12. Normalized Gain vs Input Frequency
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−0.1
−0.08
−0.06
−0.04
−0.02
0
0.02
0.04
0.06
0.08
0.1
2.7 3 3.3 3.6
VDD2 (V)
Nonlinearity (%)
VDD2 = 2.7 V to 3.6 V
−0.1
−0.08
−0.06
−0.04
−0.02
0
0.02
0.04
0.06
0.08
0.1
4.5 4.75 5 5.25 5.5
VDD2 (V)
Nonlinearity (%)
VDD2 = 4.5 V to 5.5 V
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
3.6
−400 −300 −200 −100 0 100 200 300 400
Input Voltage (mV)
Output Voltage (V)
VOUTP
VOUTN
VDD2 = 2.7 V to 3.6 V
−0.1
−0.08
−0.06
−0.04
−0.02
0
0.02
0.04
0.06
0.08
0.1
4.5 4.75 5 5.25 5.5
VDD1 (V)
Nonlinearity (%)
−360
−330
−300
−270
−240
−210
−180
−150
−120
−90
−60
−30
0
1 10 100 1000
Input Frequency (kHz)
Output Phase (°)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
−400 −300 −200 −100 0 100 200 300 400
Input Voltage (mV)
Output Voltage (V)
VOUTP
VOUTN
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Typical Characteristics (continued)
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
Figure 13. Output Phase vs Input Frequency Figure 14. Output Voltage vs Input Voltage
Figure 15. Output Voltage vs Input Voltage Figure 16. Nonlinearity vs High-Side Supply Voltage
Figure 17. Nonlinearity vs Low-Side Supply Voltage Figure 18. Nonlinearity vs Low-Side Supply Voltage
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0
1
2
3
4
5
6
7
8
9
10
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Output Rise/Fall Time (µs)
Time(2 s/div)m
200mV/div
500mV/div
500mV/div
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
0.1 1 10 100
Frequency (kHz)
Noise (nV/sqrt(Hz))
0
10
20
30
40
50
60
70
80
90
100
1 10 100
Ripple Frequency (kHz)
PSRR (dB)
VDD1
VDD2
−0.1
−0.08
−0.06
−0.04
−0.02
0
0.02
0.04
0.06
0.08
0.1
−250 −200 −150 −100 −50 0 50 100 150 200 250
Input Voltage (mV)
Nonlinearity (%)
VDD2 = 3 V
VDD2 = 5 V
−0.1
−0.08
−0.06
−0.04
−0.02
0
0.02
0.04
0.06
0.08
0.1
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Nonlinearity (%)
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Typical Characteristics (continued)
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
Figure 19. Nonlinearity vs Input Voltage Figure 20. Nonlinearity vs Temperature
Figure 21. Output Noise Density vs Frequency Figure 22. Power-Supply Rejection Ratio vs Ripple
Frequency
Figure 23. Output Rise and Fall Time vs Temperature Figure 24. Full-Scale Step Response
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0
1
2
3
4
5
6
7
8
2.7 3 3.3 3.6
VDD2 (V)
IDD2 (mA)
VDD2 = 2.7 V to 3.6 V
0
1
2
3
4
5
6
7
8
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Supply Current (mA)
IDD1
IDD2
0
1
2
3
4
5
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Output Common−Mode Voltage (V)
VDD2 = 2.7 V to 3.6 V
VDD2 = 4.5 V to 5.5 V
0
1
2
3
4
5
6
7
8
4.5 4.75 5 5.25 5.5
Supply Voltage (V)
Supply Current (mA)
IDD1
IDD2
0
1
2
3
4
5
6
7
8
9
10
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Signal Delay (µs)
50% to 10%
50% to 50%
50% to 90%
0
1
2
3
4
5
3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5
VDD2 (V)
Output Common−Mode Voltage (V)
VDD2 rising
VDD2 falling
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Typical Characteristics (continued)
At VDD1 = VDD2 = 5 V, VINP = –250 mV to 250 mV, and VINN = 0 V, unless otherwise noted.
Figure 25. Output Signal Delay Time vs Temperature Figure 26. Output Common Mode Voltage vs Low-Side
Supply Voltage
Figure 27. Output Common Mode Voltage vs Temperature Figure 28. Supply Current vs Supply Voltage
Figure 29. Low-Side Supply Current vs Low-Side Supply Figure 30. Supply Current vs Temperature
Voltage
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7 Detailed Description
7.1 Overview
The AMC1200 is a fully-differential precision isolation amplifier. The analog input signal is converted to a digital
signal and then transferred across a capacitive isolation barrier. The digital modulation used in the AMC1200
together with the isolation barrier characteristics result in excellent reliability and transient immunity.
After processing the digital signal with a low-pass filter, an analog signal is provided at the outputs. The main
building blocks are shown in the Functional Block Diagram section.
The SiO2-based capacitive isolation barrier supports a high level of magnetic field immunity, as described in
application report, ISO72x Digital Isolator Magnetic-Field Immunity (SLLA181), available for download at
www.ti.com.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Insulation Characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Maximum working
VIORM 1200 VPEAK
insulation voltage
Qualification test: after Input/Output Safety Test
Subgroup 2/3 VPR = VIORM × 1.2, t = 10 s, partial 1140 VPEAK
discharge < 5 pC
Qualification test: method a, after environmental tests
VPR Input to output test voltage subgroup 1, VPR = VIORM × 1.6, t = 10 s, partial 1920 VPEAK
discharge < 5 pC
100% production test: method b1, VPR = VIORM x 1.875, 2250 VPEAK
t = 1 s, partial discharge < 5 pC
AMC1200 4000 VPEAK
VIOTM Transient overvoltage Qualification test: t = 60 s AMC1200B 4250 VPEAK
AMC1200 4000 VPEAK
Qualification test: VTEST = VISO,
t = 60 s AMC1200B 4250 VPEAK
VISO Insulation voltage per UL AMC1200 4800 VPEAK
100% production test: VTEST =
1.2 x VISO, t = 1 s AMC1200B 5100 VPEAK
RSInsulation resistance VIO = 500 V at TS> 109Ω
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Feature Description (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PD Pollution degree 2 °
7.3.2 IEC 61000-4-5 Ratings
PARAMETER TEST CONDITIONS VALUE UNIT
VIOSM Surge immunity 1.2-μs/50-μs voltage surge and 8-μs/20-μs current surge ±6000 V
7.3.3 IEC 60664-1 Ratings(1)
PARAMETER TEST CONDITIONS SPECIFICATION
Basic isolation group Material group II
Rated mains voltage ≤150 VRMS I-IV
Rated mains voltage ≤300 VRMS I-IV
Installation classification Rated mains voltage ≤400 VRMS I-III
Rated mains voltage < 600 VRMS I-III
(1) Over operating free-air temperature range (unless otherwise noted).
7.3.4 Package Characteristics(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DWV package 8 mm
Shortest terminal to terminal
L(I01) Minimum air gap (clearance) distance through air DUB package 7 mm
Shortest terminal to terminal DWV package 8 mm
Minimum external tracking
L(I02) distance across the package
(creepage) DUB package 7 mm
surface
Tracking resistance
CTI DIN IEC 60112/VDE 0303 part 1 ≥400 V
(comparative tracking index)
Minimum internal gap Distance through the insulation 0.014 mm
(internal clearance)
Input to output, VIO = 500 V, all pins on each side of
the barrier tied together to create a two-terminal > 1012 Ω
device, TA< 85°C
RIO Isolation resistance
Input to output, VIO = 500 V, > 1011 Ω
85°C ≤TA< TAmax
Barrier capacitance input to
CIO VI= 0.5 VPP at 1 MHz 1.2 pF
output
CIInput capacitance to ground VI= 0.5 VPP at 1 MHz 3 pF
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of a specific
application. Take care to maintain the creepage and clearance distance of the board design to ensure that the mounting pads of the
isolator on the printed-circuit-board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal according to
the measurement techniques shown in the TI Isolation Glossary. Techniques such as inserting grooves and/or ribs on the PCB are used
to help increase these specifications.
7.3.5 IEC Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output (I/O)
circuitry. A failure of the I/O circuitry can allow low resistance to ground or the supply and, without current
limiting, dissipate sufficient power to overheat the die and damage the isolation barrier, potentially leading to
secondary system failures.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISSafety input, output, or supply current θJA = 246°C/W, VIN = 5.5 V, TJ= 150°C, TA= 25°C 10 mA
TCMaximum case temperature 150 °C
12 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: AMC1200 AMC1200B
l TEXAS INSTRUMENTS u 51 u ab 52
S1
S1
C =3pF
INP
C =3pF
INN
VINN
VINP
VDD1
GND1
GND1
GND1
3pF
R =28kW
IN
3pF
VINN
VINP
Equivalent
Circuit
R =
IN f C·
CLK DIFF
1
( =10MHz)fCLK
C =3.6pF
IND
GND1
GND1
400W
400WS2
S2
AGND+0.8V
AGND+0.8V
AMC1200
,
AMC1200B
www.ti.com
SBAS542D –APRIL 2011–REVISED JULY 2015
The safety-limiting constraint is the operating virtual junction temperature range specified in the Absolute
Maximum Ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in
the application hardware determine the junction temperature. The assumed junction-to-air thermal resistance in
the Thermal Information table is that of a device installed in the JESD51-3, Low Effective Thermal Conductivity
Test Board for Leaded Surface Mount Packages and is conservative. The power is the recommended maximum
input voltage times the current. The junction temperature is then the ambient temperature plus the power times
the junction-to-air thermal resistance.
7.3.6 Regulatory Information
VDE/IEC UL
Certified according to VDE V 0884-10 Recognized under 1577 component recognition program
Certificate number: 40016131 File number: E181974
7.3.7 Isolation Amplifier
The AMC1200 device consists of a second order delta-sigma modulator input stage including an internal
reference and clock generator. The output of the modulator and clock signal are differentially transmitted over the
integrated capacitive isolation barrier that separates the high- and low-voltage domains. The received bitstream
and clock signals are synchronized and processed by a third-order analog filter with a nominal gain of 8 on the
low-side and presented as a differential output of the device, as shown in Functional Block Diagram section.
7.3.8 Analog Input
The analog input range is tailored to directly accommodate a voltage drop across a shunt resistor used for
current sensing. However, there are two restrictions on the analog input signals, VINP and VINN. If the input
voltage exceeds the range AGND – 0.5 V to AVDD + 0.5 V, the input current must be limited to 10 mA to prevent
the implemented input protection diodes from damage. In addition, the linearity and the noise performance of the
device are ensured only when the differential analog input voltage remains within ±250 mV.
The differential analog input of the AMC1200 and AMC1200B devices is a switched-capacitor circuit based on a
second-order modulator stage that digitizes the input signal into a 1-bit output stream. These devices compare
the differential input signal (VIN = VINP – VINN) against the internal reference of 2.5 V using internal capacitors
that are continuously charged and discharged with a typical frequency of 10 MHz. With the S1 switches closed,
CIND charges to the voltage difference across VINP and VINN. For the discharge phase, both S1 switches open
first and then both S2 switches close. CIND discharges to approximately AGND + 0.8 V during this phase.
Figure 31 shows the simplified equivalent input circuitry.
Figure 31. Equivalent Input Circuit
7.4 Device Functional Modes
The AMC1200 is operational when the power supplies VDD1 and VDD2 are applied as specified in the
Recommended Operating Conditions section.
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Links: AMC1200 AMC1200B
l TEXAS INSTRUMENTS
AMC1200
,
AMC1200B
SBAS542D –APRIL 2011–REVISED JULY 2015
www.ti.com
Device Functional Modes (continued)
The AMC1200 does not have any additional functional modes.
14 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: AMC1200 AMC1200B
l TEXAS INSTRUMENTS ccccc HWAP '—H~
R2
12W
R3
12W
RSHUNT
AMC1200
AMC1200B
Gated
Drive
Circuit
To Load
Floating
Power Supply
HV+
Isolation
Barrier
C2
(1)
330pF
C3
10pF
(optional)
VDD1
VINP
VINN
GND1
VDD2
VOUTP
VOUTN
GND2
C4
10pF
(optional)
C1
(1)
0.1 Fm
D1
5.1V
R1
Gated
Drive
Circuit
Power
Supply
HV-
C5
(1)
0.1 Fm
ADC
TMC320
C/F28xxx
AMC1200
,
AMC1200B
www.ti.com
SBAS542D –APRIL 2011–REVISED JULY 2015
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The AMC1200 and AMC1200B devices offer unique linearity, high input common mode rejection, low DC errors
and low temperature drift. These features make the AMC1200 a robust, high-performance isolation amplifier for
industrial applications where high voltage isolation is required.
8.2 Typical Applications
8.2.1 Motor Control
Figure 32 shows a typical operation of the AMC1200 and AMC1200B devices in a motor-control application.
Measurement of the motor phase current is done through the shunt resistor, RSHUNT (in this case, a two-terminal
shunt).
(1) Place these capacitors as close as possible to the AMC device.
Figure 32. Typical Application Diagram
The high-side power supply (VDD1) for the AMC1200 and AMC1200B are derived from the power supply of the
upper gate driver. Further details are provided in the Power Supply Recommendations section.
The high transient immunity of the AMC1200 and AMC1200B ensures reliable and accurate operation even in
high-noise environments such as the power stages of the motor drives.
As shown in Figure 37, TI recommends placing the bypass and filter capacitors as close as possible to the AMC
device to ensure best performance.
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: AMC1200 AMC1200B
‘5‘ TEXAS INSTRUMENTS ah /\ AHAP ak
R2
12 W
R3
12 W
Device
Isolation
Barrier
C2
(1)
330 pF
C3
10 pF
(optional)
VDD1
VINP
VINN
GND1
VDD2
VOUTP
VOUTN
GND2
C4
10 pF
(optional)
C1
(1)
0.1 Fm
R1
C5
(1)
0.1 Fm
ADC
TMC320
C/F28xxx
C
14
13
11
9
1
2
3
4
R
R
RSHUNT
Phase
AMC1200
,
AMC1200B
SBAS542D –APRIL 2011–REVISED JULY 2015
www.ti.com
Typical Applications (continued)
8.2.1.1 Design Requirements
For better performance, the differential input signal is filtered using RC filters (components R2, R3, and C2).
Optionally, C3and C4can be used to reduce charge dumping from the inputs. In this case, take care when
choosing the quality of these capacitors; mismatch in values of these capacitors leads to a common mode error
at the modulator input. If implemented, TI recommends using NP0 capacitors for C2, C3and C4.
Figure 33. Shunt-Based Current Sensing with the AMC1200
Similar to the current measurements, isolated voltage measurements can be performed as described in the .
8.2.1.2 Detailed Design Procedure
The floating ground reference (GND1) is derived from the end of the shunt resistor, which is connected to the
negative input of the AMC1200 (VINN). If a four-terminal shunt is used, the inputs of the AMC1200 are
connected to the inner leads and GND1 is connected to one of the outer shunt leads. The differential input of the
AMC1200 ensures accurate operation even in noisy environments.
TI recommends limiting the value of resistors R2and R3to less than 24 Ωto avoid the incomplete settling of the
AMC1200 input circuitry. The section provides more details on the AMC1200 input circuitry.
The differential output of the AMC1200 can either directly drive an analog-to-digital converter (ADC) input or can
be further filtered before being processed by the ADC. For more information on the general procedure to design
the filtering and driving stages for SAR ADCs, consult the TI Precision Designs 18 bit, 1Msps Data Acquisition
Block Optimized for Lowest Distortion and Noise (SLAU515), and 18 bit Data Acquisition Block Optimized for
Lowest Power (SLAU513) available for download at www.ti.com
16 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: AMC1200 AMC1200B
l TEXAS INSTRUMENTS w L2 if
RIN
R2
R1
L1
L2
G =G +
ERRTOT ERR
R2
RIN
Time(2 s/div)m
200mV/div
500mV/div
500mV/div
AMC1200
,
AMC1200B
www.ti.com
SBAS542D –APRIL 2011–REVISED JULY 2015
Typical Applications (continued)
8.2.1.3 Application Curve
In frequency inverter applications the power switches must be protected in case of an overcurrent condition. To
allow fast powering off of the system, low delay caused by the isolation amplifier is required. Figure 34 shows the
typical full-scale step response of the AMC1200.
Figure 34. Typical Step Response of the AMC1200
8.2.2 Isolated Voltage Measurement
The AMC1200 and AMC1200B can also be used for isolated voltage measurement applications, as shown in a
simplified way in Figure 35. In such applications, usually a resistor divider (R1and R2in Figure 35) is used to
match the relatively small input voltage range of the AMC device. R2and the input resistance RIN of the
AMC1200 also create a resistance divider that results in additional gain error. With the assumption that R1and
RIN have a considerably higher value than R2, the resulting total gain error can be estimated using Equation 1:
where
• GERR = the gain error of AMC device. (1)
Figure 35. Voltage Measurement Application
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Links: AMC1200 AMC1200B
l TEXAS INSTRUMENTS
VOUTP
VOUTN
VDD2
GND2
GND1
VINN
VINP
VDD1
AMC1200
HV+
HV-
to load
Floating
Power Supply
20 V
3.3 V, or 5.0 V
RSHUNT
Gate Driver
Gate Driver
5.1 V
R1
800
Z1
1N751A
C1
0.1F
R2
12
R3
12
C3
330pF
C4
0.1F
ADS7263
AMC1200
,
AMC1200B
SBAS542D –APRIL 2011–REVISED JULY 2015
www.ti.com
9 Power Supply Recommendations
In a typical frequency inverter application, the high-side power supply for the AMC1200 (VDD1) is derived from
the system supply, as shown in Figure 36. For lowest cost, a Zener diode can be used to limit the voltage to 5 V
± 10%. TI recommends using a 0.1-µF, low-ESR decoupling capacitor for filtering this power-supply. TI also
recommends using a 0.1-µF decoupling capacitor for filtering the power-supply on the VDD2 side. For best
performance, place these capacitors (C1and C4) as close as possible to the VDD1 and VDD2 pins respectively.
If better filtering is required, an additional 1-µF to 10-µF capacitor can be used in parallel to C1and C4.
Figure 36. Zener Diode Based High-Side Supply
For higher power efficiency and better performance, a buck converter can be used; an example of such an
approach is based on the LM5017. A reference design including performance test results and layout
documentation can be downloaded at PMP9480,Isolated Bias Supplies + Isolated Amplifier Combo for Line
Voltage or Current Measurement.
10 Layout
10.1 Layout Guidelines
A layout recommendation showing the critical placement of the decoupling capacitors that be placed as close as
possible to the AMC1200 while maintaining a differential routing of the input signals is shown in Figure 37.
To maintain the isolation barrier and the high CMTI of the device, the distance between the high-side ground
(GND1) and the low-side ground (GND2) should be kept at maximum; that is, the entire area underneath the
device should be kept free of any conducting materials.
18 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: AMC1200 AMC1200B
mm INSTRUMENTS \\ \\\\\\\\\ \\Il\\\ \\ \ %/ ;
Top View
Clearance area.
Keep free of any
conductive materials.
AMC1200
AMC1200B
LEGEND
Top layer; copper pour and traces
High-side area
Controller-side area
Via
To Shunt To Filter or ADC
VDD1
VINP
GND1
VINN
VDD2
VOUTP
VOUTN
GND2
0.1mF
SMD
1206
0.1 F
SMD
1206
m
0.1 F
SMD
1206
m
330 pF
SMD
0603
12
SMD 0603
W
12
SMD 0603
W
AMC1200
,
AMC1200B
www.ti.com
SBAS542D –APRIL 2011–REVISED JULY 2015
10.2 Layout Example
Figure 37. Layout Recommendation
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 19
Product Folder Links: AMC1200 AMC1200B
l TEXAS INSTRUMENTS
AMC1200
,
AMC1200B
SBAS542D –APRIL 2011–REVISED JULY 2015
www.ti.com
11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
•TI Isolation Glossary,SLLA353
•18 bit, 1Msps Data Acquisition Block Optimized for Lowest Distortion and Noise,SLAU515
•18 bit Data Acquisition Block Optimized for Lowest Power,SLAU513
•High-Voltage Lifetime of the ISO72x Family of Digital Isolators,SLLA197
•ISO72x Digital Isolator Magnetic-Field Immunity,SLLA181
•AMC1100: Replacement of Input Main Sensing Transformer in Inverters with Isolate Amplifier,SLAA552
•Isolated Current Sensing Reference Design Solution, 5A, 2kV,TIPD121
•Isolated Bias Supplies + Isolated Amplifier Combo for Line Voltage or Current Measurement,PMP9480
• TPS62120 Data Sheet, SLVSAD5
• MSP430F471xx Data Sheet, SLAS626
• SN6501 Data Sheet, SLLSEA0
• LM5017 Data Sheet, SNVS783
11.2 Related Links
The following table lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY DOCUMENTS SOFTWARE COMMUNITY
AMC1200 Click here Click here Click here Click here Click here
AMC1200B Click here Click here Click here Click here Click here
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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Product Folder Links: AMC1200 AMC1200B
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AMC1200
,
AMC1200B
www.ti.com
SBAS542D –APRIL 2011–REVISED JULY 2015
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 21
Product Folder Links: AMC1200 AMC1200B
I TEXAS INSTRUMENTS Samples Samples Sample: Sample: Samples Samples
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
AMC1200BDUB ACTIVE SOP DUB 8 50 RoHS & Green NIPDAU Level-4-260C-72 HR -40 to 105 1200B
AMC1200BDUBR ACTIVE SOP DUB 8 350 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 1200B
AMC1200BDWV ACTIVE SOIC DWV 8 64 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 105 AMC1200B
AMC1200BDWVR ACTIVE SOIC DWV 8 1000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 105 AMC1200B
AMC1200SDUB ACTIVE SOP DUB 8 50 RoHS & Green NIPDAU Level-4-260C-72 HR -40 to 105 AMC1200
AMC1200SDUBR ACTIVE SOP DUB 8 350 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 105 AMC1200
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF AMC1200 :
•Automotive: AMC1200-Q1
NOTE: Qualified Version Definitions:
•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
l TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “KO '«m» Reel Diameter AD Dimension deswgned to accommodate the componem wwdlh ED Dimension desxgned to accommodate the componenl \engm K0 Dimenslun deswgned to accommodate the componem thickness , w OveraH wwdm loe earner cape i p1 Pitch between successwe cavuy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D D Sprockemules ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
AMC1200BDUBR SOP DUB 8 350 330.0 24.4 13.1 9.75 6.0 16.0 24.0 Q1
AMC1200BDUBR SOP DUB 8 350 330.0 24.4 10.9 10.01 5.85 16.0 24.0 Q1
AMC1200BDWVR SOIC DWV 8 1000 330.0 16.4 12.05 6.15 3.3 16.0 16.0 Q1
AMC1200SDUBR SOP DUB 8 350 330.0 24.4 10.9 10.01 5.85 16.0 24.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Mar-2022
Pack Materials-Page 1
l TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
AMC1200BDUBR SOP DUB 8 350 367.0 367.0 45.0
AMC1200BDUBR SOP DUB 8 350 346.0 346.0 29.0
AMC1200BDWVR SOIC DWV 8 1000 350.0 350.0 43.0
AMC1200SDUBR SOP DUB 8 350 346.0 346.0 41.0
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Mar-2022
Pack Materials-Page 2
l TEXAS INSTRUMENTS T - Tube height| L - Tube length l ,g + w-Tuhe _______________ _ ______________ width 47 — B - Alignment groove width
TUBE
*All dimensions are nominal
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
AMC1200BDUB DUB SOP 8 50 532.13 13 7300 6.6
AMC1200BDUB DUB SOP 8 50 532.13 13.51 7.36 6.91
AMC1200BDWV DWV SOIC 8 64 505.46 13.94 4826 6.6
AMC1200SDUB DUB SOP 8 50 532.13 13 7300 6.6
AMC1200SDUB DUB SOP 8 50 532.13 13.51 7.36 6.91
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Mar-2022
Pack Materials-Page 3
GENERIC PACKAGE VIEW DUB 8 SOP - 4.85 mm max heigm SMALL OUTLINE PACKAGE Images above are just a representation of the package family, actual package may vary Refer to the product data sheet for package details. 420761 4/ E I TEXAS INSTRUMENTS
WMWMH
www.ti.com
PACKAGE OUTLINE
C
10.7
10.1 TYP
6X 2.54
4X
(1.524)
2X
7.62
0.355
0.204 TYP
0 -8
8X 0.555
0.355
6.82
6.32
0.38 MIN
0.635
GAGE PLANE
4.85 MAX
1.45
1.15
A
9.55
9.02
NOTE 3
B6.87
6.37
4X (0.99)
4222355/G 04/2019
SOP - 4.85 mm max heightDUB0008A
SMALL OUTLINE PACKAGE
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.254 mm per side.
18
0.1 C A B
5
4
PIN 1 ID
SEATING PLANE
0.1 C
SEE DETAIL A
TOP MOLD
DETAIL A
TYPICAL
SCALE 1.200
www.ti.com
EXAMPLE BOARD LAYOUT
(9.1)
0.07 MAX
ALL AROUND 0.07 MIN
ALL AROUND
8X (0.65)
8X (2.35)
8X (0.65)
6X (2.54)
(R0.05)
TYP
8X (2.35)
6X (2.54)
(9.45)
(R0.05)
TYP
4222355/G 04/2019
SOP - 4.85 mm max heightDUB0008A
SMALL OUTLINE PACKAGE
SYMM
SYMM
LAND PATTERN EXAMPLES
EXPOSED METAL SHOWN
SCALE:5X
1
45
8
IPC-7351 NOMINAL
6.75 mm CLEARANCE/CREEPAGE
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOT TO SCALE
EXPOSED METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED METAL
1
45
8
SYMM
SYMM
HV / ISOLATION OPTION
7.1 mm CLEARANCE/CREEPAGE
www.ti.com
EXAMPLE STENCIL DESIGN
(9.1)
6X (2.54)
8X (0.65)
8X (2.35)
(R0.05)
TYP
8X (2.35)
8X (0.65)
6X (2.54)
(9.45)
(R0.05)
TYP
4222355/G 04/2019
SOP - 4.85 mm max heightDUB0008A
SMALL OUTLINE PACKAGE
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
IPC-7351 NOMINAL
6.75 mm CLEARANCE/CREEPAGE HV / ISOLATION OPTION
7.1 mm CLEARANCE/CREEPAGE
SYMM
SYMM
1
45
8
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:5X
SYMM
SYMM
1
45
8
DWV0008A
www.ti.com
PACKAGE OUTLINE
C
TYP
11.5 0.25
2.8 MAX
TYP
0.33
0.13
0-8
6X 1.27
8X 0.51
0.31
2X
3.81
0.46
0.36
1.0
0.5
0.25
GAGE PLANE
A
NOTE 3
5.95
5.75
B
NOTE 4
7.6
7.4
(2.286)
(2)
4218796/A 09/2013
SOIC - 2.8 mm max heightDWV0008A
SOIC
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
18
0.25 C A B
5
4
AREA
PIN 1 ID
SEATING PLANE
0.1 C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.000
DWV0008A j? ,,,,,,,,,,,,,,,,,,,, :L H WE \ pm ‘ CE
www.ti.com
EXAMPLE BOARD LAYOUT
(10.9)
0.07 MAX
ALL AROUND 0.07 MIN
ALL AROUND
8X (1.8)
8X (0.6)
6X (1.27)
4218796/A 09/2013
SOIC - 2.8 mm max heightDWV0008A
SOIC
SYMM
SYMM
SEE DETAILS
LAND PATTERN EXAMPLE
9.1 mm NOMINAL CLEARANCE/CREEPAGE
SCALE:6X
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
OPENING
SOLDER MASK METAL
SOLDER MASK
DEFINED
DWV0008A
www.ti.com
EXAMPLE STENCIL DESIGN
8X (1.8)
8X (0.6)
6X (1.27)
(10.9)
4218796/A 09/2013
SOIC - 2.8 mm max heightDWV0008A
SOIC
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:6X
SYMM
SYMM
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