SIA906EDJ Datasheet by Vishay Siliconix

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Vishay Siliconix
SiA906EDJ
New Product
Document Number: 69067
S-83087-Rev. A, 29-Dec-08
www.vishay.com
1
Dual N-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Protection 560 V
APPLICATIONS
• Load Switch for Portable Applications
• High Frequency DC/DC Converter
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)aQg (Typ.)
20
0.046 at VGS = 4.5 V 4.5
3.5 nC
0.063 at VGS = 2.5 V 4.5
S1
D1
G2
S2
G1
D2
1
6
5
4
2
3
2.05 mm
2.05 mm
PowerPAK SC-70-6 Dual
D1
D2
Ordering Information: SiA906EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
X X X
C C X
Lot Traceability
and Date code
Part # code
N-Channel MOSFET
N-Channel MOSFET
S2
D2
G2
S1
D1
G1
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4.5a
A
TC = 70 °C 4.5a
TA = 25 °C 4.5a, b, c
TA = 70 °C 4.1b, c
Pulsed Drain Current IDM 15
Continuous Source-Drain Diode Current TC = 25 °C IS
4.5a
TA = 25 °C 1.6b, c
Maximum Power Dissipation
TC = 25 °C
PD
7.8
W
TC = 70 °C 5
TA = 25 °C 1.9b, c
TA = 70 °C 1.2b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 52 65 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16
VISHAK
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Document Number: 69067
S-83087-Rev. A, 29-Dec-08
Vishay Siliconix
SiA906EDJ
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V
VDS Temperature Coefficient ΔVDS/TJID = 250 µA 23 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ- 3.3
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.6 1.4 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 8
µA
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V - 1
VDS = 20 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS ≤ 5 V, VGS = 4.5 V 10 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 3.9 A 0.037 0.046 Ω
VGS = 2.5 V, ID = 3.3 A 0.051 0.063
Forward Transconductanceagfs VDS = 10 V, ID = 3.9 A 14 S
Dynamicb
Input Capacitance Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
350
pFOutput Capacitance Coss 63
Reverse Transfer Capacitance Crss 37
Total Gate Charge Qg
VDS = 10 V, VGS = 10 V, ID = 5.1 A 7.5 12
nC
VDS = 10 V, VGS = 4.5 V, ID = 5.1 A
3.5 5.5
Gate-Source Charge Qgs 0.95
Gate-Drain Charge Qgd 0.75
Gate Resistance Rgf = 1 MHz 3.5 Ω
Turn-on Delay Time td(on)
VDD = 10 V, RL = 2.4 Ω
ID ≅ 4.1 A, VGEN = 4.5 V, Rg = 1 Ω
10 15
ns
Rise Time tr 12 20
Turn-Off Delay Time td(off) 18 30
Fall Time tf12 20
Turn-on Delay Time td(on)
VDD = 10 V, RL = 2.4 Ω
ID ≅ 4.1 A, VGEN = 10 V, Rg = 1 Ω
510
Rise Time tr 12 20
Turn-Off Delay Time td(off) 15 25
Fall Time tf10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 4.5 A
Pulse Diode Forward Current ISM 15
Body Diode Voltage VSD IS = 4.1 A, VGS = 0 V 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C
15 30 ns
Body Diode Reverse Recovery Charge Qrr 820nC
Reverse Recovery Fall Time ta8ns
Reverse Recovery Rise Time tb7
— VISHAYE V \\ /: 4//
Document Number: 69067
S-83087-Rev. A, 29-Dec-08
www.vishay.com
3
Vishay Siliconix
SiA906EDJ
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
0
1
2
3
4
0369121518
- Gate Current (mA)IGSS
VGS - Gate-to-Source Voltage (V)
IGSS at 25 °C
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS =5thru3V
VGS =1.5V
VGS =2V
VGS =2.5V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)I D
0.00
0.03
0.06
0.09
0.12
03691215
VGS =4.5V
VGS =2.5V
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
- Gate Current (A)IGSS
VGS - Gate-to-Source Voltage (V)
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
0 3 6 9 12 15 18
TJ = 150 °C
TJ = 25 °C
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
TC= 25 °C
TC= 125 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I D
TC= - 55 °C
0
100
200
300
400
500
0246810 12 14 16 1820
Ciss
Coss
Crss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
— VISHAY. V /
www.vishay.com
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Document Number: 69067
S-83087-Rev. A, 29-Dec-08
Vishay Siliconix
SiA906EDJ
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
10
02468
ID=5.1A
VDS =10V
VDS =16V
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
0.1
1
10
100
0.0 0.2 0.4 0.6 0.81.0 1.2 1.4
TJ= 150 °C
TJ= 25 °C
VSD -Source-to-Drain Voltage (V)
- Source Current (A)I S
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
(V)VGS(th)
TJ- Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.5
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
VGS =4.5V,2.5V
ID=3.9A
TJ-Junction Temperature (°C)
(Normalized)
- On-ResistanceRDS(on)
0.00
0.04
0.08
0.12
0.16
0.20
012345
TJ=25 °C
TJ= 125 °C
ID=2A
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
1000
100
1
0.001 0.01 0.1 10
Power (W)
Pulse (s)
20
10
5
15
0
— VISHAYE V
Document Number: 69067
S-83087-Rev. A, 29-Dec-08
www.vishay.com
5
Vishay Siliconix
SiA906EDJ
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1 TA=25 °C
Single Pulse
100 µA
Limited byR
DS(on)*
BVDSS Limited
1ms
10 ms
100 ms
10 s, 1 s
DC
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
- Drain Current (A)
ID
Current Derating*
0
2
4
6
8
10
12
0 255075100125150
Package Limited
TC- Case Temperature (°C)
ID- Drain Current (A)
Power Derating
0
2
4
6
8
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Dissipation
(
W
)
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6
Document Number: 69067
S-83087-Rev. A, 29-Dec-08
Vishay Siliconix
SiA906EDJ
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69067.
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
0.1
0.01
Normalized E
f
f
ective T ransient
Thermal Impedance
10
-3 10
-2 1 10 1000 10
-1
10
-4 100
Square Wave Pulse Duration (s)
Single Pulse
0.02
0.05
0.1
0.2
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
th JA
= 85 °C/W
3. T JM
- T
A
= P
DM
Z
th JA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3 10-2 10-1
10
-4
1
0.01
Square Wave Pulse Duration (s)
Normalized E
f
f
ective T ransient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
VISHAYE
Vishay Siliconix
Package Information
Document Number: 73001
06-Aug-07
www.vishay.com
1
PowerPAK® SC70-6L
DIM
SINGLE PAD DUAL PAD
MILLIMETERS INCHES MILLIMETERS INCHES
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
b0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010
D1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D2 0.135 0.235 0.335 0.005 0.009 0.013
E1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E2 0.345 0.395 0.445 0.014 0.016 0.018
E3 0.425 0.475 0.525 0.017 0.019 0.021
e0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
K0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP
K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP
K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP
K3 0.225 TYP 0.009 TYP
K4 0.355 TYP 0.014 TYP
L0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015
T0.05 0.10 0.15 0.002 0.004 0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
E2
BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
PIN1
PIN6 PIN5
PIN4
PIN2 PIN3
A
Z
DETAIL Z
z
D
E
K1
K2
C
A1
K3K2 K2
e b
b e
PIN6 PIN5 PIN4
PIN1 PIN3
PIN2
E1
E1
E1
L
L
K4
K
K
K
D1 D2 D1 D1
K1
E3
__\_ VISI-MYQ
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 70487
1Revision: 18-Oct-13
APPLICATION NOTE
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
1
2.500 (0.098)
0.350 (0.014)
0.275 (0.011)
0.613 (0.024)
0.300 (0.012)
0.325 (0.013)
0.950 (0.037)
0.475 (0.019)
2.500 (0.098)
0.275 (0.011)
0.160 (0.006)
1.600 (0.063)
Dimensions in mm (inches)
0.650 (0.026)
Return to Index
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Revision: 01-Jan-2021 1Document Number: 91000
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