BFS483 Datasheet by Infineon Technologies

(ifineon ROHS 3 £63 UUU
2013-07-251
BFS483
1
62
3
5
4
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
• Two (galvanic) internal isolated Transistor in
one package
• For orientation in reel see package
information below
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
EHA07196
654
321
C1 E2 B2
C2E1B1
TR1
TR2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS483 RHs 1=B 2=E 3=C 4=B 5=E 6=C SOT363
(ifineon Tsm Rsz
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BFS483
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC65 mA
Base current IB5
Total power dissipation1)
TS ≤ 40 °C
Ptot 450 mW
Junction temperature TJ150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature TSt
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 245 K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 12 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 1 µA
DC current gain
IC = 15 mA, VCE = 8 V, pulse measured
hFE 70 100 140 -
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
(ifineon Electrical Characteristics at TA = 25 °C, unless otherwise specified Values AC Characteristics (verified by random sampling
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BFS483
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 25 mA, VCE = 8 V, f = 500 MHz
fT6 8 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.34 0.54 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.13 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 1.1 -
Minimum noise figure
IC = 5 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
IC = 5 mA, VCE = 8 V, ZS = ZSopt,
f = 1.8 GHz
NFmin
-
-
0.9
1.4
-
-
dB
Power gain, maximum stable1)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Gms - 19 - dB
Power gain, maximum available2)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gma - 12.5 - dB
Transducer gain
IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 MHz
|S21e|2
-
-
15.5
10
-
-
dB
1Gms = |S21 / S12|
2Gma = |S21e / S12e| (k-(k²-1)1/2)
(ifineon
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BFS483
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
250
300
350
400
mW
500
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0. 1
0.05
0.2
0.1
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
infineon Package Outline 2 w 0.9 m 0.2 27% 01 MAX. : 3.. r ._ z- . N g Pin 1 Foot Print Marking Layout (Example) Small variations in posilioning of Date code. Type code and Manufacture are possible. H H H @L" DfigdfimweML g XYS’ 7 Manufacturer _ _|2| E H Pmmarkns Law marking "VPa “‘9 Standard Packing Reel @180 mm = 3.000 Pieces/Heel Reel 9330 mm = 10.000 Pieces/Reel For symmetric lypes no defined Fin 1 orientation in reel. 0.2
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BFS483
Package SOT363
(ifineon (
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BFS483
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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For information on the types in question, please contact the nearest Infineon
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