DNBT8105 Datasheet by Diodes Incorporated

DNBT8105
Document number: DS30513 Rev. 10 - 2
1 of 5
www.diodes.com June 2011
© Diodes Incorporated
DNBT8105
1A NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Medium Power Amplification and Switching
• High Collector Current Rating
• Complementary Version Available (DPBT8105)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DNBT8105-7 SOT-23 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Device Schematic
E
B
C
K81 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
K81
YM
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DNBT8105
Document number: DS30513 Rev. 10 - 2
2 of 5
www.diodes.com June 2011
© Diodes Incorporated
DNBT8105
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 1 A
Peak Pulse Collector Current ICM 2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD 600 mW
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C R
θ
JA 209 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V
(
BR
)
CBO 80 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V
(
BR
)
CEO 60 ⎯ V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 5 ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICBO ⎯ 100 nA VCB = 60V, IE = 0
Collector Cutoff Current ICES ⎯ 100 nA
VCE = 60V
Emitter Cutoff Current IEBO ⎯ 100 nA VEB = 4V, IC = 0
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
100
100
80
30
⎯
300
⎯
⎯
⎯
IC = 1mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯
⎯ 0.25
0.5 V IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
Base-Emitter Saturation Voltage VBE
(
SAT
)
⎯ 1.1 V
IC = 1A, IB = 100mA
Base-Emitter Turn On Voltage VBE
(
ON
)
⎯ 1.0 V
IC = 1A, VCE = 5V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 10 pF VCB = 10V, f = 1.0MHz
Current Gain-Bandwidth Product fT 150 ⎯ MHz VCE = 10V, IC = 50mA, f = 100MHz
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Short duration pulse test used to minimize self-heating effect.
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DNBT8105
Document number: DS30513 Rev. 10 - 2
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DNBT8105
0
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 1)
A
200
300
0
400
500
600
700
800
RC/W
θ
JA
°
= 209
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 DC Current Gain vs. Collector Current
C
T = 125ºC
A
T = 85ºC
A
V = 5V
CE
T = 25ºC
A
T = -55ºC
A
110 1,000 10,000
100
0
100
150
200
50
350
300
250
V,
(mV)
CE (SAT)
COLLECTOR-EMITTER
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
110 100 1,000
0
100
50
150
200
250
300
I/I = 10
CB
T = 25ºC
A
T = 125ºC
A
T = 85ºC
A
0
50
100
350
400
300
150
200
250
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (mV)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-
C
Emitter Saturation Voltage
vs. Collector Current
110 100 1,000
0
0.2
0.4
0.6
1.2
1.0
0.8
110
100 1,000 10,000
V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-
C
Emitter Turn-On Voltage
vs. Collector Current
V= 5V
CE
T = 125ºC
A
T = -55ºC
A
T = 85ºC
A
T = 25ºC
A
V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical
C
Base-Emitter Saturation Voltage
vs. Collector Current
110
100 1,000 10,000
0
0.2
0.4
1.2
0.6
0.8
1.0
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DNBT8105
Document number: DS30513 Rev. 10 - 2
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DNBT8105
0
20
40
60
120
100
80
05
10 15 20
V , REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
R
C
A
P
A
C
I
T
A
N
C
E (pF)
Package Outline Dimensions
Suggested Pad Layout
SOT-23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
DNBT8105 5 015 Document number D530513 Rev 10 , 2 WWW.diOdeS.COm
DNBT8105
Document number: DS30513 Rev. 10 - 2
5 of 5
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© Diodes Incorporated
DNBT8105
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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