MCC72, MCD72 Datasheet by IXYS

© 2004 IXYS All rights reserved 1 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4 19
MCC 72
MCD 72
ITRMS = 2x180 A
ITAVM = 2x115 A
VRRM = 800-1800 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Features
• International standard package,
JEDEC TO-240 AA
• Direct copper bonded Al2O3 -ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Gate-cathode twin pins for version 1B
Applications
• DC motor control
• Softstart AC motor controller
• Light, heat and temperature control
Advantages
• Space and weight savings
• Simple mounting with two screws
• Improved temperature and power cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
ITRMS, IFRMS TVJ = TVJM 180 A
ITAVM, IFAVM TC = 63°C; 180° sine 115 A
TC = 85°C; 180° sine 85 A
ITSM, IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 1700 A
VR = 0 t = 8.3 ms (60 Hz), sine 1800 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1540 A
VR = 0 t = 8.3 ms (60 Hz), sine 1640 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 14 450 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 13 500 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 11 850 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 11 300 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 250 A 150 A/µs
f = 50 Hz; tP =200 µs
VD = 2/3 VDRM
IG = 0.45 A non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM;t
P = 30 µs 10 W
IT = ITAVM;t
P = 300 µs 5 W
PGAV 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS; t = 1 min 3000 V~
IISOL ≤ 1 mA; t = 1 s 3600 V~
MdMounting torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Weight Typical including screws 90 g
Thyristor Modules
Thyristor/Diode Modules
6745
3
2
1
TO-240 AA
MCD
Version 8 B
MCC
Version 8 B
MCC
Version 1 B
3671 542
361 52
3152
31542
MCD
Version 1 B
VRSM VRRM Type
VDSM VDRM
V V Version 1 B 8 B Version 1 B 8 B
900 800 MCC 72-08 io1 B / io8 B MCD 72-08 io1 B / io8 B
1300 1200 MCC 72-12 io1 B / io8 B MCD 72-12 io1 B / io8 B
1500 1400 MCC 72-14 io1 B / io8 B MCD 72-14 io1 B / io8 B
1700 1600 MCC 72-16 io1 B / io8 B MCD 72-16 io1 B / io8 B
1900 1800 MCC 72-18 io1 B / io8 B MCD 72-18 io1 B / io8 B
Msmo 25/05 mu m 01 um um ~235- -3 «297.. m 01 Mm: «We; HT“: we lam: 25°C m IO
© 2004 IXYS All rights reserved
2 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4 19
MCC 72
MCD 72
Symbol Conditions Characteristic Values
IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM 5mA
VT /VFIT /IF = 300 A; TVJ = 25°C 1.74 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.85 V
rT3.2 mΩ
VGT VD = 6 V; TVJ = 25°C 2.5 V
TVJ = -40°C 2.6 V
IGT VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.2 V
IGD 10 mA
ILTVJ = 25°C; tP = 10 µs; VD = 6 V 450 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA
tgd TVJ = 25°C; VD = ½ VDRM 2µs
IG = 0.45 A; diG/dt = 0.45 A/µs
tqTVJ = TVJM; IT = 150 A, tP = 200 µs; -di/dt = 10 A/µs typ. 185 µs
VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM
QSTVJ = TVJM; IT /IF = 50 A, -di/dt = 6 A/µs 170 µC
IRM 45 A
RthJC per thyristor/diode; DC current 0.3 K/W
per module other values 0.15 K/W
RthJK per thyristor/diode; DC current see Fig. 8/9 0.5 K/W
per module 0.25 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Optional accessories for module-type MCC 72 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC / MCD Version 1 B MCC Version 8 B MCD Version 8 B
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
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© 2004 IXYS All rights reserved 3 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4 19
MCC 72
MCD 72
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
1500 Th m 0mm sun W: a x M6072 m 3 x MCD72 mo 150 20a 25a 0 no mo vso Imw 4— FED 4» m’ wt m‘ m m‘ m1 10‘ us) 4— T2” «:1 m~ 10‘ w ~a w w m‘ us) 4»
© 2004 IXYS All rights reserved
4 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4 19
MCC 72
MCD 72
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.008 0.0019
2 0.054 0.047
3 0.238 0.3
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.008 0.0019
2 0.054 0.047
3 0.238 0.3
4 0.2 1.25
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.5
180° 0.51
120° 0.53
60° 0.55
30° 0.57
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.3
180° 0.31
120° 0.33
60° 0.35
30° 0.37