RGPZ10BM40FH Datasheet

m‘ .
Datasheet
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© 2015 ROHM Co., Ltd. All rights reserved.
RGPZ10BM40FH
430V 20A Ignition IGBT
Operating Junction Temperature T
j
40 to +175 °C
Storage Temperature T
stg
55 to +175 °C
Power Dissipation P
D
107 W
250
Avalanche Energy (Single Pulse)
T
j
= 25°C E
AS
mJ
T
j
= 150°C E
AS
*2
150 mJ
Outline
BV
CES
43030V
TO-252
I
C
20A
V
CE(sat) (Typ.)
1.6V
E
AS
250mJ
Features Inner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Self-Clamped Inductive Switching Energy
3) Built in Gate-Emitter Protection Diode
4) Qualified to AEC-Q101
5) Pb - free Lead Plating ; RoHS Compliant
Packaging Specifications
Type
Packaging Taping
Applications Reel Size (mm) 330
Ignition Coil Driver Circuits Tape Width (mm) 16
Solenoid Driver Circuits Basic Ordering Unit (pcs) 2,500
Packing Code TL
Marking
RGPZ10BM40
Absolute Maximum Ratings (at T
C
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
Collector - Emitter Voltage V
CES
460 V
Emitter-Collector Voltage (V
GE
= 0V) V
EC
25 V
Gate - Emitter Voltage
Collector Current
V
GE
10 V
I
C
20 A
(1)
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
(1)
(2)
(3)
1/8 2015.10 - Rev.A
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Data Sheet
RGPZ10BM40FH
Thermal Resistance
Electrical Characteristics (at Tj = 25°C unless otherwise specified)
- 1.60 2.00 V
Tj = 150°C - 1.80 - V
- 1.3 - V
IC = 10A, VGE = 5V
Tj = 25°C 1.3 1.7 2.1 V
μA
35 - V
IG = 5mA, VCE = 0V 12 - ±17 V
25
Collector - Emitter Saturation
Voltage VCE(sat)
IC = 2mA, VGE = 0V
Tj = 25°C
Tj = 40 to 175°C*2
IC = 10mA, VGE = 0V
VCE = 300V, VGE = 0V
VGE = 10V, VCE = 0V
VCE = 5V, IC = 10mA
Tj = 150°C
Tj = 25°C
Collector Cut - off Current ICES
Gate - Emitter Leakage Current IGES
Gate - Emitter Threshold
Voltage VGE(th)
Tj = 150°C*2
Gate - Emitter Breakdown
Voltage BVGES
Collector - Emitter Breakdown
Voltage BVCES
Emitter - Collector Breakdown
Voltage BVEC
400 430 460 V
395 - 465 V
- - 100 μA
--
15 μA
Tj = 25°C --7
Conditions
Values
Unit
Min. Typ. Max.
Unit
Min. Typ. Max.
Parameter Symbol
Values
Parameter
°C/WThermal Resistance Junction - Case Rθ(j-c) - - 1.40
Symbol
2/8 2015.10 - Rev.A
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Data Sheet
RGPZ10BM40FH
Electrical Characteristics (at Tj = 25°C unless otherwise specified)
*1) Assurance items according to our measurement definition (Fig.16)
*2) Design assurance items
2.10 V
Tj = 150°C - 1.90 - V
150 - - mJ
0.23 -
Tj = 150°C*2
μs
pF
250 - -
Gate Series Resistance RG70 100 130 Ω
μs
Turn - off Delay Time*1 td(off) - 1.5 -
Fall Time*1 tf- 3.9 -
- 0.16 -
Rise Time*1 tr-
V
Total Gate Charge Qg
VCE = 15V, IC = 10A,
VGE = 5V -14-nC
- 1.13 -
Collector - Emitter Saturation
Voltage VCE(sat)
Tj = 150°C
Collector - Emitter Saturation
Voltage VCE(sat)
IC = 10A, VGE = 4V
Tj = 25°C - 1.70
mJ
Turn - on Delay Time*1 td(on)
Turn - off Delay Time*1,*2 td(off) 0.8 1.3 4.0
IC = 8A, VCC = 300V,
VGE = 5V, RG = 100Ω,
L=5mH, Tj=150°C
Tj = 25°C
Avalanche Energy (Single Pulse) EAS
L = 5mH, VGE = 5V,
VCC = 30V, RG = 1kΩ,
tr0.10 0.18 0.50
IC = 8A, VCC = 300V,
VGE = 5V, RG = 100Ω,
L=5mH, Tj=25°C
Turn - on Delay Time*1,*2 td(on)
Fall Time*1,*2 tf1.4 2.4 6.0
Rise Time*1,*2
Input Capacitance Cies VCE = 10V - 1000 -
0.09 0.17 0.50
Output Capacitance Coes VGE = 0V - 175 -
Reverse Transfer Capacitance Cres f = 1MHz - 55 -
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Tj = 25°C - 1.17 1.50
IC = 4A, VGE = 4.5V
V
3/8 2015.10 - Rev.A
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Data Sheet
RGPZ10BM40FH
Electrical Characteristic Curves
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
0 25 50 75 100 125 150 175 200
IC= 10A
VGE= 3.5V
4V
4.5V
8V 10V
5V
1
1.1
1.2
1.3
1.4
1.5
0 25 50 75 100 125 150 175 200
IC= 5A
VGE= 3.5V
4V
4.5V
8V 10V
5V
Fig.1 Typical Output Characteristics
Collector Current : IC[A]
Collector To Emitter Voltage : VCE[V]
Fig.2 Typical Output Characteristics
Collector Current : IC[A]
Collector To Emitter Voltage : VCE[V]
Fig.3 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Junction Temperature : Tj[ºC]
Fig.4 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Junction Temperature : Tj[ºC]
0
5
10
15
20
25
30
012345
Tj= 25ºCTj= 25ºC
VGE= 10V
VGE= 8V
VGE= 4.5V
VGE= 4V
VGE= 3.5V
VGE= 5V
0
5
10
15
20
25
30
012345
Tj= 25ºCTj= 175ºC
VGE= 10V
VGE= 8V
VGE= 4.5V
VGE= 4V
VGE= 3.5V
VGE= 5V
4/8 2015.10 - Rev.A
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Data Sheet
RGPZ10BM40FH
Electrical Characteristic Curves
0
0.5
1
1.5
2
2.5
0 25 50 75 100 125 150 175 200
VGE= 5V
IC= 10A
IC= 1A
IC= 4.5A
0
5
10
15
20
012345
VCE= 5V
Tj= 25ºC
Tj= 175ºC
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
-50 -25 0 25 50 75 100 125 150 175 200
VCE= 5V
IC= 10mA
0.01
0.1
1
10
100
1000
10000
-50 -25 0 25 50 75 100 125 150 175 200
VEC= 25V
VCES= 300V
Fig.8 Typical Leakage Current
vs. Junction Temperature
Leakage Current : ICES/IEC [A]
Junction Temperature : Tj[ºC]
Fig.6 Typical Transfer Characteristics
Collector Current : IC[A]
Gate To Emitter Voltage : VGE [V]
Fig.5 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Junction Temperature : Tj[ºC]
Fig.7 Typical Gate To Emitter Threshold Voltage
vs. Junction Temperature
Gate To Emitter Threshold Voltage
: VGE (th) [V]
Junction Temperature : Tj[ºC]
5/8 2015.10 - Rev.A
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Data Sheet
RGPZ10BM40FH
Electrical Characteristic Curves
Fig.9 Typical Collector To Emitter Breakdown
Voltage vs. Junction Temperature
Collector To Emitter Breakdown Voltage
: BVCES [V]
Junction Temperature : Tj[ºC]
Fig.10 Typical Self Clamped Inductive
Switching Current vs. Inductance
Self Clamped Inductive Switching Current
: IAS [A]
Inductance : L [mH]
Fig.12 Typical Capacitance
vs. Collector To Emitter Voltage
Capacitance [pF]
Collector To Emitter Voltage : VCE[V]
Fig.11 Typical Gate Charge
Gate To Emitter Voltage : VGE [V]
Gate Charge : Qg [nC]
400
410
420
430
440
450
460
-50 -25 0 25 50 75 100 125 150 175 200
VGE= 0V
ICES= 2mA
0
1
2
3
4
5
0 5 10 15
VCC= 12V
IC= 10A
Tj= 25ºC
1
10
100
1000
10000
0.01 0.1 1 10 100
f= 1MHz
VGE= 0V
Tj= 25ºC
Cies
Coes
Cres
0
5
10
15
20
25
30
35
40
012345678910
VCC= 30V
VGE= 5V
RG= 1kΩ
6/8 2015.10 - Rev.A
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Data Sheet
RGPZ10BM40FH
Electrical Characteristic Curves
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
D= 0.5 0.2 0.10.3
Single Pulse
0.01
0.02
0.05
Fig.14 Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
Pulse Width : t1[s]
t1
t2
PDM
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
Switching Time [μs]
Junction Temperature : Tj[ºC]
Fig.13 Typical Switching Time
vs. Junction Temperature
C1 C2 C3 R1 R2 R3
1.472m 983.8u 3.844m 391.6m 985.3m 23.10m
0.1
1
10
0 25 50 75 100 125 150 175 200
VCC= 30V, IC= 8A,
VGE= 5V, L= 5mH,
Rg= 100Ωtf
td(off)
tr
td(on)
7/8 2015.10 - Rev.A
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© 2015 ROHM Co., Ltd. All rights reserved.
Data Sheet
RGPZ10BM40FH
Inductive Load Switching Circuit and Waveform
Self Clamped Inductive Switching Circuit and Waveform
VG
D.U.T.
Fig.15 Inductive Load Switching Circuit
Fig.17 Self Clamped Inductive Switching Circuit
Fig.16 Inductive Load Switching Waveform
Fig.18 Self Clamped Inductive Switching Waveform
EAS
VCE(sat)
IC
VCE
VCC
Vclamp
tr
tof
f
10%
90%
tf
td(on)
td(off)
Gate Drive Time
VCE
(
sat
)
10%
90%
ton
VGE
IC
VCE
VG
D.U.T.
8/8 2015.10 - Rev.A
ROHm SEMICONDUCTOR
R1102
A
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