DG441,442 Datasheet by Vishay Siliconix

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Vishay Siliconix
DG441, DG442
Document Number: 70053
S11-1066-Rev. J, 30-May-11
www.vishay.com
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This document is subject to change without notice.
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Quad SPST CMOS Analog Switches
DESCRIPTION
The DG441, DG442 monolithic quad analog switches are
designed to provide high speed, low error switching of analog
and audio signals. The DG441 has a normally closed
function. The DG442 has a normally open function.
Combining low on-resistance (50 , typ.) with high speed
(tON 150 ns, typ.), the DG441, DG442 are ideally suited for
upgrading DG201A/202 sockets. Charge injection has been
minimized on the drain for use in sample-and-hold circuits.
To achieve high voltage ratings and superior switching
performance, the DG441, DG442 are built on Vishay
Siliconix’s high-voltage silicon-gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages to the supply levels when off.
FEATURES
• Halogen-free according to IEC 61249-2-21
Definition
• Low on-resistance: 50
• Low leakage: 80 pA
• Low power consumption: 0.2 mW
• Fast switching action - tON: 150 ns
• Low charge injection - Q: - 1 pC
• DG201A/DG202 upgrades
• TTL/CMOS-compatible logic
• Single supply capability
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Less signal errors and distortion
• Reduced power supply requirements
• Faster throughput
• Improved reliability
• Reduced pedestal errors
• Simplifies retrofit
• Simple interfacing
APPLICATIONS
• Audio switching
• Battery powered systems
• Data acquisition
• Hi-Rel systems
• Sample-and-hold circuits
• Communication systems
• Automatic test equipment
• Medical instruments
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" 0.8 V
Logic "1" 2.4 V
DG441
DG441
Dual-In-Line and SOIC
IN1IN2
D1D2
S1S2
V- V+
GND NC
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
Top View
9
S1
NC
S2
IN3
V-
D3
V+
D4
NC
IN4
NC
NC
GND
IN2
NC
D2
S4
D1
S3
IN1
Key
Top View
LCC
910111213
4
5
6
7
8
1231920
14
15
16
17
18
TRUTH TABLE
Logic DG441 DG442
0 On Off
1OffOn
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
Vishay Siliconix
DG441, DG442
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C.
SCHEMATIC DIAGRAM Typical Channel
ORDERING INFORMATION
Temp. Range Package Part Number
- 40 °C to 85 °C
16-pin plastic DIP
DG441DJ
DG441DJ-E3
DG442DJ
DG442DJ-E3
16-pin narrow SOIC
DG441DY
DG441DY-E3
DG441DY-T1
DG441DY-T1-E3
DG442DY
DG442DY-E3
DG442DY-T1
DG442DY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
V+ to V- 44
V
GND to V- 25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Continuous Current (any terminal) 30 mA
Current, S or D (pulsed at 1 ms, 10 % duty cycle) 100
Storage Temperature (AK suffix) - 65 to 150 °C
(DJ, DY suffix) - 65 to 125
Power Dissipation (Package)b
16-pin plastic DIPc450
mW
16-pin CerDIPd900
16-pin narrow SOICd900
LCC-20d1200
Figure 1.
INX
5 V Reg
Level
Shift/
Drive
V+
GND
V-
V-
V+
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
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Vishay Siliconix
DG441, DG442
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONSa (Dual Supplies)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 - 15 15 V
Drain-Source
On-Resistance RDS(on)
IS = - 10 mA, VD = ± 8.5 V
V+ = 13.5 V, V- = - 13.5 V
Room
Full
50 85
100
85
100
On-Resistance Match Between
ChannelseRDS(on)
IS = - 10 mA, VD = ± 10 V
V+ = 15 V, V- = - 15 V
Room
Full
4
5
4
5
Switch Off Leakage Current
IS(off) V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
Room
Full
± 0.01 - 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
nA
ID(off) Room
Full
± 0.01 - 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
Channel On Leakage Current ID(on)
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
Room
Full
± 0.08 - 0.5
- 40
0.5
40
- 0.5
- 10
0.5
10
Digital Control
Input Current VIN Low IIL
VIN under test = 0.8 V,
All Other = 2.4 V Full - 0.01 - 500 500 - 500 500
nA
Input Current VIN High IIH
VIN under test = 2.4 V
All Other = 0.8 V Full 0.01 - 500 500 - 500 500
Dynamic Characteristics
Tu r n - On T im e tON RL = 1 k, CL = 35 pF
VS = ± 10 V
See Figure 2
Room 150 250 250
ns
Turn-Off Time DG441 tOFF
Room 90 120 120
DG442 Room 110 210 210
Charge InjectioneQCL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 Room - 1 pC
Off IsolationeOIRR RL = 50 , CL = 5 pF
f = 1 MHz
Room 60
dB
Crosstalk (Channel-to-
Channel) XTA L K Room 100
Source Off CapacitanceeCS(off) f = 1 MHz Room 4
pF
Drain Off CapacitanceeCD(off) Room 4
Channel On CapacitanceeCD(on) VANALOG = 0 V Room 16
Power Supplies
Positive Supply Current I+
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
Full 15 100 100
µA
Negative Supply Current I- Room
Full
- 0.0001 - 1
- 5
- 1
- 5
Ground Current IGND Full - 15 - 100 - 100
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
Vishay Siliconix
DG441, DG442
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa (Single Supply)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full 0 12 0 12 V
Drain-Source
On-Resistance RDS(on)
IS = - 10 mA, VD = 3 V, 8 V
V+ = 10.8 V
Room
Full
100 160
200
160
200
Dynamic Characteristics
Tur n -On Ti m e tON RL = 1 k, CL = 35 pF
VS = 8 V
See Figure 2
Room 300 450 450
ns
Tur n -Off T i m e tOFF Room 60 200 200
Charge Injection Q CL = 1nF, Vgen = 6 V, Rgen = 0 Room 2 pC
Power Supplies
Positive Supply Current I+
V+ = 13.2 V, V- = 0 V
VIN = 0 or 5 V
Full 15 100 100
µA
Negative Supply Current I- Room
Full
- 0.0001 - 1
- 100
- 1
- 100
Ground Current IGND Full - 15 - 100 - 100
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
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Vishay Siliconix
DG441, DG442
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
RDS(on) vs. VD and Power Supply Voltage
RDS(on) vs. VD and Unipolar
Power Supply Voltage
Crosstalk and Off Isolation vs. Frequency
200- 20
0
20
60
40
80
100
± 15 V
± 20 V
± 5 V
± 8 V
± 10 V
- 15 - 10 - 5 5 10 15
R
DS(on)
- Drain-Source On-Resistance (Ω)
VD - Drain Voltage (V)
± 12 V
200
0
50
150
200
100
250
300
V+ = 5 V
8 V
10 V
12 V
15 V
20 V
V- = 0 V
4 8 12 16
RDS(on) - Drain-Source On-Resistance ()
VD- Drain Voltage (V)
(- dB)
0
20
40
80
100
60
120
140
1K 10K 100K 1M 10M100
V+ = 15 V
V- = - 15 V
Ref. 10 dBm
Off Isolation
Crosstalk
f - Frequency (Hz)
RDS(on) vs. VD and Temperature
RDS(on) vs. VD and Temperature
(Single 12-V Supply)
Charge Injection vs. Source Voltage
150- 15
0
20
50
30
70
80
40
60
10
125 °C
25 °C
85
°C
- 40 °C
V+ = 15 V
V- = - 15 V
- 10 - 5 5 10
VD - Drain Voltage (V)
RDS(on) - Drain-Source On-Resistance ()
- 55 °C
0 °C
1260
0
20
40
80
100
60
120
140
V+ = 12 V
V- = 0 V
125 °C
25 °C
- 55 °C
85 °C
24 810
VD - Drain Voltage (V)
RDS(on) - Drain-Source On-Resistance ()
- 40 °C
0 °C
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
Vishay Siliconix
DG441, DG442
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Switching Threshold vs. Supply Voltage
Source/Drain Leakage Currents (Single 12 V Supply)
Switching Time vs. Power Supply Voltage
0
1.6
0.8
2.4
0 5 10 15 20
V+, V- Positive and Negative Supplies (V)
- (V)
IN
V
1260
-40
-30
-10
-20
0
10
V+ = 12 V
V- = 0 V
For ID, VS = 0
For IS, VD = 0
IS(off)
, ID(off)
IS(on) + ID(on)
24 810
VD or VS - Drain or Source Voltage (V)
- (pA)I , I
SD
Supply Voltage (V)
t - (ns)
± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22
160
140
120
20
80
60
40
100
tOFF
tON
Source/Drain Leakage Currents
Operating Voltage
Switching Time vs. Power Supply Voltage
150-15
- 100
-80
-40
-20
-60
0
20
-10 -5 5 10
V+ = 15 V
V- = - 15 V
For I(off), VD = - VS
IS(off)
, ID(off)
ID(on)
VD or VS - Drain or Source Voltage (V)
- (pA)I , I
SD
V+ - (V)
- 50- 200
0
10
30
40
50
20
- 40- 30- 10
44
3
V-
V+
D
IN
S
V- - Negative Supply (V)
CMOS
Compatible
5 V - CMOS
Compatible
TTL Compatible
VIN = 0.8 V, 2.4 V
t - (ns)
500
400
0
822
200
100
300
10 12 14 16 18 20
tOFF
tON
V- = 0 V
VS - Source Voltage (V)
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
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Vishay Siliconix
DG441, DG442
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Figure 2. Switching Time
0 V
Logic
Input
Switch
Input
Switch
Output
3 V
50 %
0 V
VO
VS
tr < 20 ns
tf < 20 ns
tOFF
tON
Note: Logic input waveform is inverted for DG442.
50 %
80 % 80 %
10 V
CL (includes fixture and stray capacitance)
V-
V+
IN
SD
3 V
RL
1 k
CL
35 pF
VO
- 15 V
GND
+ 15 V
Figure 3. Charge Injection
OFFONOFF
OFFONOFF
VO
V
O
INX
INX
Q = VO x CL
(DG441)
(DG442)
CL
1 nF
IN
DVO
V-
V+
S
3 V
Rg
- 15 V
GND
+ 15 V
Figure 4. Crosstalk
C = 1 mF tantalum in parallel with 0.01 mF ceramic
50
D1
VO
Rg = 50
S1
+ 15 V
- 15 V
D2
GND
V+
V-
NC
C
C
S2
RL
IN1
XTA L K Isolation = 20 log VS
VO
0 V, 2.4 V
0 V, 2.4 V
VS
IN2
C = RF bypass
Figure 5. Off Isolation
S
IN RL
D
Rg = 50
VS
VO
0 V, 2.4 V
Off Isolation = 20 log VS
VO
V+
- 15 V
GND V- C
C
+ 15 V
Figure 6. Source/Drain Capacitances
S
D
IN
+ 15 V
- 15 V
GND
V+
V- C
C
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
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Document Number: 70053
S11-1066-Rev. J, 30-May-11
Vishay Siliconix
DG441, DG442
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATIONS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70053.
Figure 7. Power MOSFET Driver
+ 15 V
+ 15 V
GND V-
V+
0 = Load Off
1 = Load On
+ 24 V
I = 3 A
VN0300 L, M
DG442
+ 15 V
10 k
150
RL
IN
Figure 8. Open Loop Sample-and-Hold
H = Sample
L = Hold
- 15 V
+ 15 V
V
IN
V
OUT
C
H
SD
IN
1/4 DG442
+
-
+
-
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier
+ 15 V
- 15 V
V+
V- GND
DG441 or DG442
+
-
VIN VOUT
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit ac-
curacy of circuit.
GAIN1
AV = 1
GAIN2
AV = 10
GAIN3
AV = 20
GAIN4
AV = 100
R1
90 k
R2
5 k
R3
4 k
R4
1 k
VOUT
VIN
=R1 + R2 + R3 + R4
R4
= 100
With SW4 Closed
- VISHAY HHHHHHHH |:||:||:||:||:||:||:||:|
All Leads
0.101 mm
0.004 IN
E
H
C
D
e B A1 LĬ
4312 8756
131416 15 91012 11
Package Information
Vishay Siliconix
Document Number: 71194
02-Jul-01 www.vishay.com
1
SOIC (NARROW): 16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS INCHES
Dim Min Max Min Max
A1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B0.38 0.51 0.015 0.020
C0.18 0.23 0.007 0.009
D9.80 10.00 0.385 0.393
E3.80 4.00 0.149 0.157
e1.27 BSC 0.050 BSC
H5.80 6.20 0.228 0.244
L0.50 0.93 0.020 0.037
Ĭ0_8_0_8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
- VISHAY
E1E
Q1
A
L
A1
e1B
B1
S
C
eA
D
15°
MAX
12345678
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71261
06-Jul-01 www.vishay.com
1
PDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A3.81 5.08 0.150 0.200
A10.38 1.27 0.015 0.050
B0.38 0.51 0.015 0.020
B10.89 1.65 0.035 0.065
C0.20 0.30 0.008 0.012
D18.93 21.33 0.745 0.840
E7.62 8.26 0.300 0.325
E15.59 7.11 0.220 0.280
e12.29 2.79 0.090 0.110
eA7.37 7.87 0.290 0.310
L2.79 3.81 0.110 0.150
Q11.27 2.03 0.050 0.080
S0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
VISHAY» o a (1 1 n 022 n 050 o 025 —— 10 559) (1 2701 10 7111 Recnmmended Mlmmum Pads Dimensmns 1n 1ncnes1‘1mm1 Dawns mu v15 24 p
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72608
24 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
0.372
(9.449)
Return to Index
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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